"JOURNAL OF RADIO ELECTRONICS"  N 2, 2010

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The free-carrier concentration diagnostics of n-InxGa1-xAs epitaxial films by Raman Spectroscopy

L.P. Avakyants1, T.P. Kolmakova2

1 Lomonosov Moscow State University, physics faculty, general physics department
 2
JSC "Optron", Moscow, Russia

 

Received January 24, 2010

Abstract. Raman scattering has been studied in n-type In0.1Ga0.9As epitaxial layers with carrier concentrations 1017<n<1019 cm-3. It is shown that the behavior of high-frequency modes L+ can be described by the model of the phonon-plasmon coupled modes in the approximation of Drude. On the basis of the theory and experimental data the concentration of free carriers evaluated.


Keywords: Raman scattering, semiconductor, phonon-plasmon coupled modes.