Application of porous layers and optimization of annealing of
dopants and radiation defects to increase of sharpness of
p-n-junctions
distributions in bipolar heterotransistors
E. L. Pankratov
Nizhny Novgorod State
University of Architecture and Civil Engineering
Received February 14, 2011
Abstract. In this paper we consider an
approach to decrease depth of p-n-junctions in a bipolar
transistor in a semiconductor heterostructure. At one time with the decreasing
of the depth homogeneity of dopant distributions in doped area increases. The approach
based on application of inhomogeneity of the heterostructure and optimization
of annealing time. To increase the both effects (decreasing of the depth and
increasing of homogeneity of dopant distributions) it could be used inhomogenous
distribution of defects (for example, porous) of materials of the
heterostructure of materials.
Keywords: increasing of sharpness of p-n-junctions;
optimization of annealing; bipolar heterotransistors; heterostructures with
porous layers.