PACS number(s): 78.66.Fd
Photoreflectance from n-i-p-i-n delta-doped GaAs heterostructures
L.P. Avakyants1, P.Yu. Bokov1, I.V.
Bugakov1, A.V. Chervyakov1, T.P. Kolmakova2
1
M.V. Lomonosov Moscow State University, physics faculty, general physics
department
2
JSC «Optron», Moscow, Russia, 105318
Received January 15, 2010
Abstract. GaAs n-i-p-i-n
heterostructures with
Be-delta doped layers
have been investigated by photoreflectance spectroscopy. The magnitudes of the
built-in electric fields and effective band gap energy have been calculated from
the analysis of Franz-Keldysh oscillations. Observed
increase in energy
of interband transition is explained by Burstein-Moss effect due to
photogeneration of carriers in delta-doped layer.
Keywords: photoreflectance,
delta-doped heterostructures, GaAs.