anomalous dispersion of waves, propagated in multilayer metal-semiconductor structures

 

B. F. Murmuzhev, R. N. Denisyuk
Kotel'nikov Institute of Radio-engineering and Electronics of RAS, Fryazino branch
 

Received June 28, 2010
 

Abstract. It was found, that the disperse characteristic curve of one of the main waves, propagated in metal-semiconductor structure having two electromagnetic-connected layers, has the anomalous cut-off on the frequency equal to zero and the value of  relative retardation depends upon geometrical and material parameters of the structure. The possibility of application of such structure for the construction of wideband power divider of millimeter waves was shown.

 

Keywords: multilayer metal-semiconductor structures, anomalous dispersion, power divider, millimeter waves.