"JOURNAL OF RADIO ELECTRONICS"  N 7, 2013

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FREQUENCY DEPENDENCE OF REAL AND IMAGINARY PARTS OF COMPLEX DIELECTRIC PERMITTIVITY AND CONDUCTIVITY OF TlInSe2 SINGLE CRYSTAL AT RELAXATION PROCESSES

 

S. N. Mustafaeva

Institute of Physics of Nation Academy of Sciences of Azerbaidzhan

Received May 1, 2013

 

Abstract.  Dielectric measurements of   TlInSe2 single crystal in frequency range      5 × 104–3.5 × 107 Hz allowed to establish relaxation character of dispersion of dielectric permittivity and nature of dielectric losses. The experimental frequency dependence of the dissipation factor tan d for TlInSe2 single crystal has maximum at f = 105 Hz and at f > 105 Hz is characterized with a monotonic descending. The hyperbolic decrease of tan d with frequency is evidence of the fact, that conductivity loss becomes the main dielectric loss mechanism in the TlInSe2 single crystal at studied frequency range.  Maximum on the tan d (f) – curve points to relaxation losses in TlInSe2. The value of optic dielectric permittivity of TlInSe2 single crystal (opt = 17.9) has been determined from high-frequency dielectric measurements. The static dielectric permittivity (e¢st = 526.6), the relaxation frequency (fr = 1.84 × 104 Hz) and relaxation time (τ = 5.4 × 10–5 s) have been estimated for TlInSe2 single crystal.

Keywords: dielectric permittivity; frequency; dielectric losses; conductivity; relaxation polarization; TlInSe2 single crystal.