FREQUENCY DEPENDENCE OF
REAL AND IMAGINARY PARTS OF COMPLEX DIELECTRIC PERMITTIVITY AND
CONDUCTIVITY OF TlInSe2 SINGLE CRYSTAL AT RELAXATION
PROCESSES
S. N.
Mustafaeva
Institute of Physics of Nation Academy of Sciences of Azerbaidzhan
Received
May 1, 2013
Abstract.
Dielectric measurements of TlInSe2
single crystal in frequency range 5 × 104–3.5 × 107
Hz allowed to establish relaxation character of dispersion of dielectric
permittivity and nature of dielectric losses. The experimental frequency
dependence of the dissipation factor tan d
for TlInSe2 single crystal has maximum at f = 105 Hz and
at f > 105 Hz is
characterized with a monotonic descending. The hyperbolic decrease of tan d
with frequency is evidence of the fact, that conductivity loss becomes the main
dielectric loss mechanism in the TlInSe2 single crystal at studied
frequency range. Maximum on the tan d
(f) – curve points to relaxation losses in TlInSe2. The value of
optic dielectric permittivity of TlInSe2 single crystal (e¢opt
= 17.9) has been determined from high-frequency dielectric measurements. The
static dielectric permittivity (e¢st
= 526.6), the relaxation frequency (fr = 1.84 × 104
Hz) and relaxation time (τ = 5.4 × 10–5 s) have been
estimated for TlInSe2 single crystal.
Keywords:
dielectric permittivity; frequency;
dielectric losses; conductivity; relaxation polarization; TlInSe2 single
crystal.