Decreasing of depth of elements of system of implanted-junction rectifiers
and increasing of their circit complexivity by optimization inhomogeneity and
annealing of doped structure
E. L. Pankratov,
Nizhniy Novgorod architectural-building institute
Received May 15, 2010
Abstarct.
It has been recently shown, that depth of diffused- and
implanted-junction rectifiers could be decreased in comparison with rectifiers
in homogenous samples by choosing of parameters of doped multilayer structure
and by optimization of annealing. Analogous approach it could be used to
increase circit complexivity of the rectifiers. In this paper we analyze
redistribution of dopant during manufacturing of sistems of implanted-junction
rectifiers (bipolar transistors and thyristors) to decrease depth of systems of
implanted-junction rectifiers and increase circit complexivity of the systems by
using inhomogeneity of semiconductor heterostructure and optimization of
annealing.
Keywords:
decreasing of depth of implanted-junction rectifiers, increasing of circit
complexivity of system of implanted-junction rectifiers, optimization of
annealing.