Prototype of memristor memory cell based on MIM-structures using
gradient HfxAl1-xOy
as insulator layer
A. A. Chouprik
1,
A. S. Baturin
1,
K. V. Bulakh
1,
K. V. Egorov
1,
A. A. Kuzin
1,
D. V. Negrov
1,
S. A. Zaitsev
1,
A. M. Markeev
1,
Yu. Yu.
Lebedinskiy
3,1,
E. S. Gornev
2,1,
O. M. Orlov
2,1,
A.V. Zablotskiy
1
1
Moscow Institute of Physics and Technology (State
University), Dolgoprudniy, Russia
2
Molecular Electronics Research Institute, Zelenograd,
Russia
3
Moscow Engineering Physics Institute (State University)
Moscow, Russia
Received
June 17, 2013
Abstract. Prototype
of non-volatile resistive switch memory cell based on MIM-structures using gradient HfxAl1-xOy
as insulator layer was produced and its functional properties was
investigated. These structures imitate placing of memory cells at metallization
layers. Its rewrite voltage is considerably lower and its rewrite speed is considerably
faster then as compared with traditional flash-memory cell.
Keywords: resistive switch effect, atomic layer deposition, non-volatile
memory, hafnium oxide, ReRAM.