"JOURNAL OF RADIO ELECTRONICS"  N 6, 2014

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ABOUT THE ESTIMATE OF THE THERMAL BURNOUT POWER
OF THE DIODE SEMICONDUCTOR STRUCTURES AT A PULSING ELECTROMAGNETIC RADIATION

 

S. A. Mesheryakov

State Science Research Experimental Institute of Technical Information Protection Problems

 

The paper is received on June 9, 2014

 

Abstract: Within the limits of numerical model in drift-diffusion thermal approach of calculation of power characteristics for p-n-structure and structure with a Schottky barrier are given at action of a pulsing electromagnetic radiation are given. Distinction is shown in an estimate of thermal defeat power by two criterions – incident exterior power and diffused interior power. Characteristics of thermal burnout of the diode-structures for microwave and square pulses in a gamut of temperatures of a thermal heating 400 ... 1400 °Ñ is compare.

Key words: numerical model, semiconductor structure, pulse radiation, power of thermal burnout.