ABOUT THE ESTIMATE OF THE THERMAL BURNOUT POWER
OF THE DIODE SEMICONDUCTOR STRUCTURES AT A PULSING ELECTROMAGNETIC
RADIATION
S. A. Mesheryakov
State Science Research Experimental Institute of Technical Information
Protection Problems
The paper is received on June 9, 2014
Abstract:
Within the limits of numerical model in drift-diffusion
thermal approach of calculation of power characteristics
for p-n-structure and structure with a Schottky barrier are given at
action of a pulsing electromagnetic radiation are given. Distinction is shown
in an estimate of thermal defeat power by two criterions – incident exterior
power and diffused interior power. Characteristics
of thermal burnout of the diode-structures for microwave and square pulses in a
gamut of temperatures of a thermal heating 400 ... 1400 °Ñ
is compare.
Key words:
numerical model, semiconductor structure, pulse
radiation, power of thermal burnout.