Spectroscopic study of bismuth centers in aluminosilicate optical fibers
L. I. Bulatov*, V.
M.
Mashinsky**, V.
V.
Dvoyrin**,
A. P. Sukhorukov*
* M.V. Lomonosov Moscow state University, Faculty of physics
** Fiber optics research center, Russian
Academy
of sciences
Received
March 18, 2009
The shape and
spectral position of luminescence bands in bismuth-doped aluminosilicate optical
fibers was shown to depend on the excitation wavelength that confirms
multicomponent structure of red and infrared luminescence. Absorption and
luminescent transitions were defined and the energy level scheme was improved
within the model of three modifications of the same bismuth center caused by
different environments in a network of aluminosilicate glass. The possibility of
the growth of red and infrared luminescence intensity of bismuth centers in
aluminosilicate optical fibers under the exposure to 514, 532 and 244 nm laser
radiation was shown for the first time. Hydrogen loading followed by the laser
irradiation results in further increase of infrared luminescence.