Use of negative plasma-stable resist based on poly(ether sulfone) in
the manufacture of impurity-sensitive superconductor structures
A. S. Ilyin, I. A. Kohn, A. G. Kovalenko
Kotel′nikov Institute of Radio-engineering and Electronics of RAS
The paper is received on November 20, 2014
Abstract: Use of negative
plasma-stable resist based on poly(ether sulfone) for superconducting titanium
microstructures fabrication using electron-beam lithography methods is
investigated. Poly(ether sulphone) resist masks show high chemical, thermal and
mechanical stability. This allows to avoid negative effects of resist
outgassing and hardening, and fabricate titanium microstructures of high purity
for their use in transition edge sensors. Resist’s negativity allows to
decrease duration of exposure and to reduce risk related to thermal drift of
specimen holder.
Keywords: poly(ether sulfone),
electron-beam lithography, negative resist, outgassing, titanium,
superconducting microstructures.