Modulation of characteristics of picosecond stimulated emission of
GaAs,
recommendations about its use and suppression. Visualization of the hole,
"burnt" by emission, in the region of amplification of light absorption spectrum
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov
Kotel'nikov Institute of Radio-engineering and Electronics of
RAS, Moscow
Received
September 26, 2012
Abstract: Self-modulation of
characteristics of intrinsic picosecond stimulated emission, arising during
photogeneration of electron-hole plasma (EHP) in GaAs, is phenomenologically explained.
Modulation allows us to consider the emission, moving in the active medium in
directions to and from the sample end face, as two components of a
self-oscillating system, with properties characteristic for the system of coupled
oscillators. This is a new argument that photogenerated EHP, longitudinal optical
phonon and intrinsic emission interact
self-consistently and form a self-oscillating
system. Recommendations for use or elimination of the considered emission modulation
by design of powerful semiconductor lasers are given. Self-modulation of the absorption
spectrum, as another product of self-oscillating system, gives an idea on
formation and evolution of a virtual hole, "burnt" by emission, in
the region of amplification spectrum.
Keywords: Self-modulation, stimulated
emission, picosecond, optical phonon, semiconductor laser, absorption spectrum.