current-voltage characteristics of red and yellow AlGaInP HETEROSTRUCTURES under Gamma and fast neutron irradiation

 

A. V. Gradoboev ^1,2, K. N. Orlova ¹, I. A. Asanov ²

¹ Tomsk Polytechnical University, Urga branch

² Scientific Institute of Semiconductor Devices, Tomsk

The paper is received on October 17, 2013

Abstract. Research results of the current-voltage characteristics of red (630 nm) and yellow (590 nm) AlGaInP light-emitting diodes are presented under irradiation by gamma rays to ⁶⁰Co dose of 5∙10⁶ Gy and fast neutron fluence of 2∙10¹⁴ n/cm². An operating mode is passive. It is shown that changes in the current-voltage characteristics are absent in the all dose and fluences range. The current-voltage characteristics found two distinct phases, which are estimated to correspond to areas of average and strong injection. Detailed investigation of the current-voltage characteristics of LEDs allows to associate these areas with two mechanisms of current generation - the injection of charge carriers and the injection of charge carriers along with the modulation of the AlGaInP active field resistance in the semi-logarithmic scale.

Keywords: heterostructures AlGaInP, radiation hardness, light-emitting diodes.