Decreasing of depth of
p-n-junction
in a semiconductor
heterostructure
by serial radiation processing and microwave
annealing
E. L. Pankratov
Nizhny Novgorod State
University of Architecture and Civil Engineering,
Received July 13, 2011
Abstract. It has recently been shown, that
manufacturing of diffusive-junction rectifiers and implanted-junction
rectifiers in a semiconductor heterostructure after appropriate choosing of
parameters of the structure and optimization of annealing time leads to
increase of the sharpness of p-n-junction and at one time to
increase the homogeneity of dopant distribution in doped area. Formation of
inhomogeneity of temperature in the heterostructure by laser or microwave
annealing gives us possibility to increase the both effects at one time. It has
recently been shown by experiments, that predoping radiation processing of
materials leads to changing of dopant diffusion in comparison with nonprocessed
one. In this paper we consider the possibility to use serial radiation
processing of materials of heterostructure before doping and microwave annealing
of radiation defects after doping to increase the sharpness p-n-junctions
and at one time to increase the homogeneity of dopant distribution in doped
area in the heterostructure.
Keywords: increasing of sharpness of p-n-junctions;
bipolar heterotransistors; optimization of annealing; radiation processing of
materials; microwave annealing.