Determination of
technological parameters of drift transistors according to specified
operational characteristics
A.N.
Frolov1, Ê.A. Frolov1,
S.V.
Shutov2
1- Kherson National State University, 2- Institute of Semiconductor Physics by V. Lashkaryov
NASU
Received February 18, 2008
Algorithm of determination of
physical parameters of a transistor structure for obtaining a specified set of
its basic electrical characteristics has been presented. Empirical formulas
derived by statistic processing of a large quantity of experimental data which
allow to determine parameters of structure of drift n-p-n-transistor with the
most optimum combination of output characteristics have been used for building
the algorithm.