The simulation of current-voltage characteristics of 4H-SiC Shottky diode

P. V. Panchenko, A. A. Malakhanov, S. B. Rybalka, A. V. Rad'kov

Bryansk State Polytechnic University

The paper is received on July 20, 2016

 

Abstract. The simulation of 4H-SiC Shottky diode with Ti Shottky contact has been carried out with used of TCAD program. Obtained current-voltage characteristics has been analyzed and compared with theoretical and experimental results. It is established that the Shottky diode parameters (forward current, ideality coefficient, Schottky barrier height, breakdown voltage) predicts proposed with good approximation.

Key words: Shottky diode, silicon carbide, simulation, thermionic theory.

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