Journal of Radio Electronics. eISSN 1684-1719. 2026. ¹8

Contents

Full text in Russian (pdf)

Russian page

 

 

DOI: https://doi.org/10.30898/1684-1719.2026.8.10

 

 

 

DEVELOPMENT OF MODIFICATIONS OF A MEMRISTOR
WITH AN AUXILIARY ELECTRODE

 

À.E. Urazbekov, P.E. Troyan, Y.V. Sakharov

 

Tomsk State University of Control Systems and Radioelectronics,
634050, Russia, Tomsk, prosp., Lenina, 40

 

The paper was received July 1, 2026.

 

Abstract. This article presents the development of memristor modifications with an auxiliary electrode and the verification of the proposed technical solution, which features a fundamentally new design. The samples consisted of multilayer memristive structures with aluminum electrodes and an active layer obtained by magnetron sputtering of hafnium and tantalum targets. The auxiliary electrode was formed using a system based on a Zeiss Supra 55 series field-emission scanning electron microscope with a Raith 150 electron-beam exposure unit. It is shown that the proposed design solution allows for a more than twofold increase in the ratio of resistive states under the same conditions for the formation of the memristor's active layer, as well as a reduction in the spread of its operating voltages.

Key words: memristor, hafnium oxide, tantalum oxide, resistive effect.

Financing: The work was carried out by a team from the Scientific Laboratory of Integrated Optics and Radiophotonics with financial support from the Ministry of Science and Higher Education of the Russian Federation within the framework of the FEWM 2024-0004 project.

Corresponding author: Urazbekov Artur, artur.urazbekov@tusur.ru

References

1. Isaev, A. G., Permyakova, O. O., & Rogozhin, A. E. (2023). Oxide memristors for ReRAM: approaches, characteristics, structures. Microelectronics, 52(2), 127–151.

2. Laurenti, M., Porro, S., Pirri, C. F., Ricciardi, C., & Chiolerio, A. (2017). Zinc oxide thin films for memristive devices: a review. Critical Reviews in Solid State and Materials Sciences, 42(2), 153-172.

3. Zhuo, V. Y., Chen, Z., & Chui, K. J. (2021). Resistive Random Access Memory Device Physics and Array Architectures. In Emerging Non-volatile Memory Technologies: Physics, Engineering, and Applications (pp. 319-343). Singapore: Springer Singapore.

4. Feng, P. A. N., et al. «Nonvolatile resistive switching memories-characteristics, mechanisms and challenges.» Progress in Natural Science: Materials International 20 (2010): 1-15.

5. Lee, Jaejun, et al. «Improved resistive switching characteristics of Au/TiO2/Au memristors on PDMS substrates with pyramid arrays.» Materials Science and Engineering: B 314 (2025): 117986.

6. Ghenzi, Néstor, and C. Acha. «Exploring the synaptic response of reactive Mn electrodes based TiO2 resistive switches.» Solid-State Electronics 223 (2025): 109033.

7. Hernández-Rodríguez, E., et al. «Effect of electrode type in the resistive switching behaviour of TiO2 thin films.» Journal of Physics D: Applied Physics 46.4 (2013): 045103.

8. Hasina, Dilruba, et al. «Surfing the Growth Parameters in the Quest for Low‐Power, Forming‐Free, and Highly Stable TiOx Memristors for Nanoscale Electronics.» Small 21.7 (2025): 2408369.

9. Yeon, Hanwool, et al. «Alloying conducting channels for reliable neuromorphic computing.» Nature Nanotechnology 15.7 (2020): 574-579.

10. Urazbekov À. Å., et al. (2025). A new way to increase the Roff /Ron memristor parameter on the example of titanium oxide thin-film structure. Technical Physics Letters, 51(12)

For citation:

Urazbekov À.E., Troyan P.E., Sakharov Y.V. Development of modifications of a memristor with an auxiliary electrode. // Journal of Radio Electronics. – 2026. – ¹. 8. https://doi.org/10.30898/1684-1719.2026.8.10 (In Russian)