"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 12, 2016

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Mechanism of change of power parameters in one-transistor generator caused by the generation of chaos


S. V. Savel’ev, V. E. Sizov
Kotel'nikov Institute of Radio-engineering and Electronics of RAS, Fryazino Branch,
Vvedensky Sq. 1, Fryazino Moscow region, 141120, Russia


The paper is received on November 21, 2016


Abstract. For the first time the reasons of reduction of value of output power and efficiency are theoretically and experimentally investigated at generation of chaotic fluctuations in one-transistor generators of big power in comparison with their regular modes of self-oscillations. It is established that reduction of power parameters is connected with the mechanism of generation of chaos in such systems representing sequence of tsug with any number of fluctuations and a casual initial phase. Numerical values of falling of efficiency of such systems are established upon transition to the chaotic mode.

Key words: one-transistor generator, regular and chaotic oscillations.


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