Mechanism of change of power parameters in one-transistor generator
caused by the generation of chaos
S. V. Savel’ev,
V. E. Sizov
Kotel'nikov Institute of
Radio-engineering and Electronics of RAS, Fryazino Branch,
Vvedensky Sq. 1, Fryazino
Moscow region, 141120, Russia
The paper is received on
November 21, 2016
Abstract. For the first time the
reasons of reduction of value of output power and efficiency are theoretically
and experimentally investigated at generation of chaotic fluctuations in
one-transistor generators of big power in comparison with their regular modes
of self-oscillations. It is established that reduction of power parameters is
connected with the mechanism of generation of chaos in such systems
representing sequence of tsug with any number of fluctuations and a casual
initial phase. Numerical values of falling of efficiency of such systems are
established upon transition to the chaotic mode.
Key words: one-transistor generator,
regular and chaotic oscillations.
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