Abstract. In this paper we introduce an
approach to increase density of field-effect transistors framework a circuit of
a sixth-order Chebyshev low-pass filter. Framework the approach we consider
manufacturing the inverter in heterostructure with specific configuration.
Several required areas of the heterostructure should be doped by diffusion or
ion implantation. After that dopant and radiation defects should be annealed
framework an optimized scheme. Framework the optimized scheme user of the
scheme should choose required spatial distribution of dopant (let it be
idealized). After that the user shall choose value of annealing time by
minimization of approximation error between the above chosen spatial
distribution of dopant and nearest real spatial distribution of dopant. We also
analyzed influence of mismatch-induced stress in the considered heterostructure
on distribution of concentration of dopant. Based on the analysis we formulate
recommendations to decrease value of mismatch-induced stress. We introduce an
analytical approach to analyze linear and nonlinear mass and heat transports in
heterostructures during manufacturing of integrated circuits with account
mismatch-induced stress. The approach gives a possibility to take into account
spatial and at the same time temporal variations of parameters of both types of
transports (such as diffusion and heat diffusion coefficients).
Keywords: sixth-order Chebyshev low-pass
filter; increasing integration rate of field-effect heterotransistors; optimization
of manufacturing.
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