Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2020. No. 12
Contents

Full text in Russian (pdf)

Russian page

 

DOI  https://doi.org/10.30898/1684-1719.2020.12.12

UDC 681.518.3

 

Research of thermal electric processes in power modules

 

V. I. Smirnov 1,2, V. A. Sergeev 1,2, A. A. Gavrikov 1, A. A. Kulikov 1

1 Ulyanovsk Branch of the Kotenlikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, 432071, Ulyanovsk, Goncharova str., 48/2

2 Ulyanovsk State Technical University, Severnyi Venets str., 32, Ulyanovsk 432027, Russia


The paper was received on December 12, 2020

 

Abstract. The paper describes the results of investigation of thermophysical processes in power modules. Measuring the thermal field caused by dies heating due to flow of heating current shows uniform temperature distribution in the area of dies mount. This indicates that the processes of current localization caused by positive thermal feedback are compensated by the processes of heat transfer between the chips through the DBC board, which has a high thermal conductivity. The modulation method was used to measure the thermal resistance "junction-to-case" of the power module. In this case, the module dies were heated by PWM pulses of the heating current through the antiparallel diodes of the module MOSFETs. The modulation method allows to measure power module thermal resistance, which value is less than 0.1 K/W.

Keywords: power module, MOSFET, thermal resistance, modulation method, temperature field, thermal imaging camera.

References

1. Gavrikov V., Solonin D. Review of SemiPowerex power modules.  Silovaya elektronika - Power electronics.  2018. No.5. P.22-25. (In Russian)

2. Vintrich A., Bekedal P. Standardization of thermal resistance of IGBT: basic principles and some features. Silovaya elektronika - Power electronics.  2017. No.2. P.16–23. (In Russian)

3. Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method). JEDEC JESD24-3 standard.

4. OST 11 0944-96. Mikroskhemy integral'nyye i pribory poluprovodnikovyye. Metody rascheta, izmereniya i kontrolya teplovogo soprotivleniya [Integrated microcircuits and semiconductor devices. Methods for calculating, measuring and controlling thermal resistance].  Moscow, GUP NPP Pulsar. 1997 .110 p. (In Russian)

5. Smirnov V.I., Sergeev V.A., Gavrikov A.A., Shorin A.M. Measurement of thermal impedance of powerful transistors. Radiotekhnika – Radio Engineering. 2017. No.6. P.83–90. (In Russian)

6. Sergeev V.A., Smirnov V.I., Gavrikov A.A., Frolov I.V. Measurement of thermal impedance of high-power LEDs using pulse-width modulation of power.  Izvestiya vuzov. Elektronika – Proceedngs of Universitier. Electronics. 2012. No.3. P.64–68. (In Russian)

7. Smirnov V.I., Gavrikov A.A., Shorin A.M. Method for measuring the components of thermal resistance of semiconductor devices and its practical implementation. Avtomatizatsiya protsessov upravleniya -  Automation of ControlPprocesses.  2017. No.2. P.98–105. (In Russian)

8. Plesz B., Ress S., Szabo PG, Hantos G. and Dudola D. Issues of Thermal Transient Testing on Photovoltaic Modules.  20th International Workshop on Thermal investigations of IC's and Systems. Greenwich, London, 2014, 24-26 September.

9. Smirnov V.I., Sergeev V.A., Gavrikov A.A., Kulikov A.A. Features of current distribution in solar cells when measuring thermal resistance in diode mode. Zhurnal radioelektroniki - Journal of Radioelectronics.  2020.  No.5. https://doi.org/10.30898/1684-1719.2020.5.11. (In Russian)

10. Pastukhov V. Modern Russian power modules. Sovremennaya elektronika - Modern electronics. 2006.  No.8. P.22–23. (In Russian)

 

For citation:

Smirnov V.I., Sergeev V.A., Gavrikov A.A., Kulikov A.A. Research of thermal electric processes in power modules. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2020. No.12. https://doi.org/10.30898/1684-1719.2020.12.12  (In Russian)