Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2021. №12
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DOI: https://doi.org/10.30898/1684-1719.2021.12.4

UDC: 621.382

 

AlGaAs/InGaAs/GaAs pHEMT-structures

with AlAs donor nanoinsertion

 

M. M. Abdulov 1, A. S. Vergaskina 2, A. V. Lobanova 1,2

E. S. Pirozhkova 2, A. A. Vedeneev 1,2

 

1 JSC “RPC “Istok” named after Shokin”, Vokzalnaya 2A, Fryazino 141190, Russia

2 Branch of RTU MIREA in Fryazino, Vokzalnaya 2A, Fryazino 141190, Russia

 

The paper was received December 10, 2021

 

Abstract. In the present paper we study a method to improve planar uniformity of AlGaAs/InGaAs/GaAs pHEMT-structures sheet resistance by means of introducing of 5 nm thick AlAs donor insertion into the barrier layer. The structures are grown by MOCVD at 76.2 mm GaAs(001) semi-isolating wafer. It has been found out that such structures stably have sheet resistance square root deviation lower than 1%. All the structures have passed technical control by the haze. The atomic-force microscopy studies show nearly ideal morphology of the structures surfaces.

Key words: MOCVD, pHEMT-structure, sheet resistance, two-dimensional electron gas, electron mobility, electron concentration, Hall effect, atomic-force microscopy.

References

1. He Z., Wang H., Wang Q., Fan J., Zou Y., Ma X. The effect of unintentional carbon incorporation on the electrical properties of AlGaAs grown by MOCVD. Optical Materials. 2020. V.108. P.110227. https://doi.org/10.1016/j.optmat.2020.110227

2. Vinichenko A.N., Vasil’evskii I.S. Pseudomorphic HEMT quantum well AlGaAs/InGaAs/GaAs with AlAs:delta-Si donor layer. Material Science and Engineering. 2016. V.151. №1. P.012037. http://dx.doi.org/10.1088/1757-899X/151/1/012037

3. Castillo-Ojedaa R.S., Díaz-Reyesb J., Arellanoc M.G., Peralta-Clarab M.C., Veloz-Rendónb S.J. Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD. Materials Research. 2017. V.20. №5 P.1166-1173. https://doi.org/10.1590/1980-5373-MR-2016-0512

For citation:

Abdulov A.A., Vergaskina A.S., Lobanova A.V., Pirozhkova E.S., Vedeneev A.A. AlGaAs/InGaAs/GaAs pHEMT-structures with AlAs donor nanoinsertion. Zhurnal radioelektroniki [Journal of Radio Electronics] [online]. 2021. №12. https://doi.org/10.30898/1684-1719.2021.12.4 (In Russian)