Journal of Radio Electronics. eISSN 1684-1719. 2023. №12
ContentsFull text in Russian (pdf)
DOI: https://doi.org/10.30898/1684-1719.2023.12.8
Features of application of composite two-component target
with copper inclusions at magnetron sputtering
for creation of memristors
А.E. Urazbekov, P.E. Troyan, Y.V. Sakharov
Tomsk State University of Control Systems and Radioelectronics
634050, Russia, Tomsk, prospect Lenina, 40
The paper was received October 23, 2023.
Abstract. The results of obtaining resistive memory elements and the study of their properties are presented. The samples were metal/dielectric/metal structures, the active layer of which was obtained by magnetron sputtering of a composite titanium-copper target. Electron microscopic analysis showed that the active layer after the transition to a low-resistance state has a vertically oriented morphology, indicating a filamentous switching mechanism. The volt-ampere characteristics and the effect of resistive switching are studied. It was found that the proposed method of obtaining a dielectric layer is suitable for the manufacture of memristors. In particular, it is demonstrated that the use of these films in the structure of a memristive memory element makes it possible to obtain a ratio of a state with a high electrical resistance to a state with a low electrical resistance of more than 102.
Key words: resistive switching, memristive effect, copper influence, titanium oxide, thin films.
Financing: The research was financially supported by the Ministry of Science and Higher Education of the Russian Federation under the Priority 2030 program. The work was carried out under the agreement №075-03-2020-237/1 dated March 05, 2020.
Corresponding author: Urazbekov Artur, artur.urazbekov@mail.ru
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For citation:
Urazbekov А.E., Troyan P.E., Sakharov Y.V. Features of application of composite two-component target with copper inclusions at magnetron sputtering for creation of memristors. // Journal of Radio Electronics. – 2023. – №. 12. https://doi.org/10.30898/1684-1719.2023.12.8 (In Russian)