Seminsulating 6H-SiC substrates for application in modern electronics
A. A. Lebedev 1,5,
S. V. Belov 1,
D. P. Litvin 1,2
, I. P. Nikitina 1,
A. V. Vasil’ev
2, Yu. N.
Makarov 2, S. S.
V. V. Popov 3,
V. N. Vuginov 4,
1) Ioffe Physical-Technical Institute of
2) Nitride Crystals Group Ltd. St.Petersburg
JSC SvetlanaSt. Petersburg
JSC Svetlana-Elektronpribor, St. Petersburg
5) Saint-Petersburg National Research University
of Information Technologies, Mechanics and Optics
The paper is received
on February 6, 2014
Abstract: In this paper a study
of semi-insulating 6H-SiC substrates production "Svetlana-Electronpribor". It was shown that substrate
grown by its parameters are not inferior to similar substrates produced by leading world companies. Consider the possible applications of this material in the production of various electronic devices
Key words: semi-insulating silicon
carbide field effect transistors, gallium nitride, graphene.