Distribution of dopant in a multilayer structure during production of transistor structure

E.L. Pankratov
Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia

Received January 9, 2008

In this paper analysis of infused and implanted dopant redistribution in a multilayer structure during annealing of dopant and radiation defects for production bipolar transistors has been done. An approach to increase at one time of the sharpness and the homogeneity of dopant distribution in doped area in diffused-junction and implanted-junction rectifiers, which were produced as a parts of a bipolar transistor, has been proposed. Annealing time has been optimized for increasing simultaneously the sharpness and the homogeneity.