dopant in a multilayer structure during production of
for Physics of Microstructures of RAS,
Received January 9, 2008
In this paper analysis of infused and
implanted dopant redistribution in a multilayer structure during annealing of
dopant and radiation defects for production bipolar transistors has been done.
An approach to increase at one time of the sharpness and the homogeneity of
dopant distribution in doped area in diffused-junction and implanted-junction
rectifiers, which were produced as a parts of a bipolar transistor, has been
proposed. Annealing time has been optimized for increasing simultaneously the
sharpness and the homogeneity.