Abstract. In this paper we
introduce a model of dopant redistribution in a multilayer structure during
manufacturing a detection comparator with account nonlinearity of the
redistribution, time dependence of parameters (through their temperature
dependence) and radiation defects (for ion type of doping). We also introduce
an approach to analyze the approach based on solving of appropriate differential
equations. Based on the solution we introduce an approach to increase
integration rate of elements of an detection comparator. Framework the approach
we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation.
Annealing of dopant and/or radiation defects should be optimized.
Keywords: detection comparator,
increasing of integration rate, optimization of technological process.
References
1. V.I. Lachin, N.S. Savelov. Elektronika
[Electronics]. Rostov-on-Don, Feniks Publ., 2001. (In Russian)
2.
A.G. Alexenko, I.I. Shagurin. Mikroskhemotekhnika [Microcircuitry].
Moscow, Radio I Svyaz Publ., 1990. (In Russian)
3.
N.A. Avaev, Yu.E. Naumov, V.T Frolkin. Osnovy mikroelektroniki [Basis of
microelectronics]. Moscow, Radio I Svyaz Publ., 1991. (In Russian)
4.
X. Tang, K.P. Pun. New fully-differential amplifier-less pipelined ADC with
wide power scalability and ERBW. Analog. Integr. Circ. Sig. Process.
2014. Vol. 80. P. 427-435.
5.
D. Fathi, B. Forouzandeh, N. Masoumi. New enhanced noise analysis in active
mixers in nanoscale technologies. Nano. 2009. Vol. 4. No. 4. P. 233-238.
6
S.A. Chachuli, P.N.A. Fasyar, N. Soin, N.M. Karim, N. Yusop. Pareto ANOVA
analysis for CMOS 0.18µm two-stage Op-amp. Mat. Sci. Sem. Proc. 2014. Vol.
24. P. 9-14.
7.
A.O. Ageev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya.
Kudrik, P.M. Litvin, V.V. Milenin, A.V. Sachenko. Au-TiB x -n-6H-SiC Schottky
barrier diodes: Specific features of charge transport in rectifying and
nonrectifying contacts. Semiconductors. 2009. Vol. 43. No. 7. P.
865-873.
8.
Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R.F. Karlicek, Jr.T.P. Chow. Monolithic integration of light-emitting diodes and power
metal-oxide-semiconductor channel high-electron-mobility transistors for
light-emitting power integrated circuits in GaN on sapphire substrate. Appl.
Phys. Lett. Vol. 102. No. 19. P.
192107-192109 (2013).
9.Jung-Hui
Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo. High-performance InGaP/GaAs
pnp δ-doped heterojunction bipolar transistor. Semiconductors. 2009. Vol. 43. No. 7. P. 939-942.
10.
O.V. Alexandrov, A.O. Zakhar'in, N.A. Sobolev, E.I. Shek, M.M. Makoviychuk,
E.O. Parshin. Formation
of donor centers upon annealing of dysprosium and holmium-implanted silicon. Semiconductors.
1998. Vol. 32. No. 9. P. 921-923.
11.
M.J. Kumar, T.V. Singh. Quantum confinement effects in strained silicon MOSFETS. Int. J. Nanoscience. 2008. Vol. 7. No. 2-3.
P. 81-84.
12. P. Sinsermsuksakul, K. Hartman, S.B. Kim, J. Heo, L. Sun,
H.H. Park, R. Chakraborty, T. Buonassisi, R.G. Gordon. Enhancing the
efficiency of SnS solar cells via band-offset engineering with a zinc
oxysulfide buffer layer. Appl. Phys. Lett. 2013. Vol. 102. No. 5. P.
053901-053905.
13. J.G. Reynolds, C.L. Reynolds, Jr.A. Mohanta, J.F. Muth,
J.E. Rowe, H.O. Everitt, D.E. Aspnes. Shallow acceptor complexes in
p-type ZnO. Appl. Phys. Lett. 2013. Vol. 102. No. 15. P. 152114-152118.
14.
K.K. Ong, K.L. Pey, P.S. Lee, A.T.S. Wee, X.C. Wang, Y.F. Chong. Dopant distribution
in the recrystallization transient at the maximum melt depth induced by laser
annealing. Appl. Phys. Lett. 2006. Vol. 89. No. 17. P. 172111-172114.
15.
H.T. Wang, L.S. Tan, E. F. Chor. Pulsed laser annealing of Be-implanted GaN. J.
Appl. Phys. 2005. Vol. 98. No. 9. P. 094901-094905.
16.
S.T. Shishiyanu, T.S. Shishiyanu, S.K. Railyan. Shallow p-n-junctions
formed in silicon using pulsed photon annealing. Semiconductors. 2002. Vol.
36. No. 5. P. 581-587.
17.
Yu.V. Bykov, A.G. Yeremeev, N.A. Zharova, I.V. Plotnikov, K.I. Rybakov, M.N.
Drozdov, Yu.N. Drozdov, V.D. Skupov. Diffusion processes in semiconductor
structures during microwave annealing. Radiophysics and Quantum Electronics.
2003. Vol. 46. No. 8-9. P. 749-755.
18.
E.L. Pankratov, E.A. Bulaeva. Doping of materials during manufacture
p-n-junctions and bipolar transistors. Analytical approaches to model
technological approaches and ways of optimization of distributions of dopants. Reviews
in Theoretical Science. 2013. Vol. 1. No. 1. P. 58-82.
19. V.V.
Kozlovsky. Modifitsirovanie poluprovodnikov puchkami protonov [Modification
of semiconductors by proton beams]. Sant-Peterburg, Nauka Publ., 2003. (In
Russian)
20.
Z.Yu. Gotra. Tekhnologiya mikroelektronnykh ustroistv [Technology of
microelectronic devices]. Moscow, Radio I Svyaz Publ., 1991. (In Russian)
21.
V.L. Vinetskiy, G.A. Kholodar', Radiatsionnaya fizika poluprovodnikov [Radiative
physics of semiconductors]. Kiev, Naukova Dumka Publ., 1979. (In Russian)
22.
P.M. Fahey, P.B. Griffin, J.D. Plummer. Point defects and dopant diffusion in
silicon. Rev. Mod. Phys. 1989. Vol. 61. No. 2. P. 289-388.
23.
A.N. Tikhonov, A.A. Samarskii. Uravneniya matematicheskoy fiziki [Mathematical physics
equations].
Moscow, Nauka Publ., 1972. (In Russian)
24. H.S. Carslaw, J.C. Jaeger.
Conduction of heat in solids. London: Oxford
University Press, 1964.
25. E.L.
Pankratov. Dopant diffusion dynamics and optimal diffusion time as influenced
by diffusion-coefficient nonuniformity. Russian Microelectronics. 2007. Vol. 36. No. 1. P. 33-39.
26.
E.L. Pankratov. Redistribution of dopant during annealing of radiative defects in a
multilayer structure by laser scans for production an implanted-junction rectifiers. Int. J. Nanoscience.
2008. Vol. 7. No. 4-5. P. 187-197.
27.
E.L. Pankratov. On approach to
optimize manufacturing of bipolar heterotransistors framework circuit of an
operational amplifier to increase their integration rate. Influence
mismatch-induced stress. J. Comp. Theor. Nanoscience. 2017. Vol. 14. No. 10. P. 4885-4899.
28. E.L. Pankratov. On modelling of
manufacturing of a high-voltage current driver framework a heterostructures
under influence of miss-match induced stress and porosity of materials. J. Comp. Theor.
Nanoscience. 2018. Vol.
1. No. 6/7.
P. 1898-1914.
29.
E.L. Pankratov. On optimization of manufacturing of two-phase logic circuit
based on heterostructures to increase density of their elements. Advanced science,
engineering and medicine. 2017. Vol. 9. No. 9. P. 787-801.
30. E.L. Pankratov, E.A. Bulaeva. On variation of charge carrier
mobility under influence of mismatch-induced stress in a heterostructure. Multidiscipline modeling
in materials and structures. 2018. Vol. 14. No. 1. P. 77-90.
31.
E.L. Pankratov, E.A. Bulaeva. An approach to manufacture of bipolar transistors
in thin film structures. On the method of optimization. Int. J. Micro-Nano Scale
Transp. 2014. Vol. 4. No. 1. P. 17-31.
32. E.L. Pankratov, E.A. Bulaeva. Application of native inhomogeneities
to increase compactness of vertical field-effect transistors. J. Nanoengineering and
Nanomanufacturing. 2012. Vol. 2. No. 3. P. 275-280.
33. E.L. Pankratov, E.A.
Bulaeva. An approach to increase the integration rate of planar drift
heterobipolar transistors. Materials science in semiconductor processing. 2015. Vol. 34. P.
260-268.
For citation:
E. L. Pankratov.
An approach for analysis of redistribution of
dopant in a multilayer structure during manufacturing a detection comparator.
Accounting of nonlinearity of the redistribution, time dependence of parameters
and radiation defects. Zhurnal
Radioelektroniki - Journal of Radio Electronics. 2019. No. 1. Available at
http://jre.cplire.ru/jre/jan19/9/text.pdf
DOI 10.30898/1684-1719.2019.1.9