"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 1, 2019

contents of issue      DOI  10.30898/1684-1719.2019.1.9     full text in Russian (pdf)  

An approach for analysis of redistribution of dopant in a multilayer structure during manufacturing a detection comparator. Accounting of nonlinearity of the redistribution, time dependence of parameters and radiation defects

E. L. Pankratov

Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia

Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, Russia

 

The paper is received on January 15, 2019

 

Abstract. In this paper we introduce a model of dopant redistribution in a multilayer structure during manufacturing a detection comparator with account nonlinearity of the redistribution, time dependence of parameters (through their temperature dependence) and radiation defects (for ion type of doping). We also introduce an approach to analyze the approach based on solving of appropriate differential equations. Based on the solution we introduce an approach to increase integration rate of elements of an detection comparator. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

Keywords: detection comparator, increasing of integration rate, optimization of technological process.

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For citation:

E. L. Pankratov. An approach for analysis of redistribution of dopant in a multilayer structure during manufacturing a detection comparator. Accounting of nonlinearity of the redistribution, time dependence of parameters and radiation defects. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 1. Available at http://jre.cplire.ru/jre/jan19/9/text.pdf

DOI  10.30898/1684-1719.2019.1.9