UDC 681.518.3
MEASUREMENT
OF CROSS THERMAL RESISTANCE OF
POWER MODULES
V. I. Smirnov 1,2, V. A. Sergeev 1,2, A. A. Gavrikov 1, A. M.
Shorin 2
1 Ulyanovsk branch of Kotelnikov Institute of Radioengineering
and Electronics of Russian Academy of Sciences, Goncharova 48/2, Ulyanovsk 432071, Russia
2 Ulyanovsk State Technical
University, Severny Venets 32, Ulyanovsk, 432027,
Russia
The paper is received on July 12, 2019
Abstract. The paper describes the
results of measuring cross coupling characteristics of power MOSFET-modules.
Measurements are based on the method using device under test heating by
harmonically varying power and measuring the temperature response to such impact.
Measurements were performed by Apparatus for Measurement of Thermal Impedance which
allows to heat each transistor of power module and to measure the temperature
response of other transistors. Measuring thermal impedance matrix components
was done by analysis of the thermal impedance on modulation frequency dependence.
This method can be used not only for MOSFET- or IGBT-transistors but also for
hybrid integrated circuits and PCBs.
Keywords: thermal resistance,
thermal impedance matrix, power modules, modulation method.
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For citation:
V. I. Smirnov, V. A. Sergeev, A. A. Gavrikov, A. M.
Shorin. Measurement of cross
thermal resistance of power modules. Zhurnal
Radioelektroniki - Journal of Radio Electronics. 2019. No. 7. Available at http://jre.cplire.ru/jre/jul19/6/text.pdf
DOI 10.30898/1684-1719.2019.7.6