" " N 6, 2013

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537.312.7

HfxAl1-xOy

 

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17 2013 .

. , HfxAl1-xOy ( ) Al. . -.

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Abstract. Prototype of non-volatile resistive switch memory cell based on MIM-structures using gradient HfxAl1-xOy as insulator layer was produced and its functional properties was investigated. These structures imitate placing of memory cells at metallization layers. Its rewrite voltage is considerably lower and its rewrite speed is considerably faster then as compared with traditional flash-memory cell.
Keywords: resistive switch effect, atomic layer deposition, non-volatile memory, hafnium oxide, ReRAM.