"JOURNAL OF RADIO ELECTRONICS"  N 6, 2014

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ABOUT THE ESTIMATE OF THE THERMAL BURNOUT POWER
OF THE DIODE SEMICONDUCTOR STRUCTURES AT A PULSING ELECTROMAGNETIC RADIATION

 

S. A. Mesheryakov

State Science Research Experimental Institute of Technical Information Protection Problems

 

The paper is received on June 9, 2014

 

Abstract: Within the limits of numerical model in drift-diffusion thermal approach of calculation of power characteristics for p-n-structure and structure with a Schottky barrier are given at action of a pulsing electromagnetic radiation are given. Distinction is shown in an estimate of thermal defeat power by two criterions incident exterior power and diffused interior power. Characteristics of thermal burnout of the diode-structures for microwave and square pulses in a gamut of temperatures of a thermal heating 400 ... 1400 is compare.

Key words: numerical model, semiconductor structure, pulse radiation, power of thermal burnout.