**
ABOUT THE ESTIMATE OF THE THERMAL BURNOUT POWER **

OF THE DIODE SEMICONDUCTOR STRUCTURES AT A PULSING ELECTROMAGNETIC
RADIATION

**
**

**
S. A. Mesheryakov**

**
State Science Research Experimental Institute of Technical Information
Protection Problems **

The paper is received on June 9, 2014

**Abstract:**
Within the limits of numerical model in drift-diffusion
thermal approach of calculation of power characteristics
for *p-n-*structure and structure with a Schottky barrier are given at
action of a pulsing electromagnetic radiation are given. Distinction is shown
in an estimate of thermal defeat power by two criterions – incident exterior
power and diffused interior power. Characteristics
of thermal burnout of the diode-structures for microwave and square pulses in a
gamut of temperatures of a thermal heating 400 ... 1400 °Ñ
is compare.

**Key words:**
numerical model, semiconductor structure, pulse
radiation, power of thermal burnout.