UDC 621.382
Transformation of the surface
layers of GaAs under the influence of electromagnetic radiation of millimeter
range
T. A. Bryantseva 1, D. V. Lioubtchenko 2, I. A. Markov 1,
Yu. A. Ten 1
1 Fryasino branch of Kotelnikov Institute of Radioengineering
and Electronics of Russian Academy of Sciences, Vvedensky Sq., 1, Fryazino, Moscow region, 141190 Russia
2 Center for Terahertz Research and Applications (CENTERA), Institute
for High Pressure Physics, PAS, 29/37 Sokolowska Str, 01-142 Warsaw, Poland
The paper is received on June 7, 2019
Abstract. The transformations of GaAs surface under influence of
radiation of millimeter-wave electromagnetic waves with weak power were
investigated. This investigation bases on varies of Ga and As masses at the
near-surface layers of GaAs, depended on the power and duration of irradiation.
The determination of elements Ga and As at GaAs surface under irradiation was fixed by fine chemical
analysis using the method of photometric analyzes. The investigation samples
were epitaxial structure of GaAs (n+-n-n++). It includes
the surface etching in a concentrated HCl solution. That permits to only “free”
Ga and As atoms are removed in the solution HCl without affecting the main
crystal (selective etching method). “Free” Ga and As – the atoms, which are not
related to the crystal lattice of GaAs, or enters into a chemical bond with O,
or OH-. This method makes be possible to determining the
quantitative of “free” Ga and As atoms in the surface layer of GaAs, both
before and after irradiation, with an accuracy of up to 5%. The value of activation energy of mass
(Ga and As) changing points at the nature of the surface transforming. It is shown, that during
irradiation of the GaAs surface relaxation processes are observed. The interior energy in
the surface layers and the surface electrical potential connects with the
elastic or plastic deformation. At this, the deformation is accompanied by
charged particles migration, including ions Ga+and As-.
They migration is due to drift or diffusion way. As
occurred, the
effect of relaxation is caused either by electrolytic phenomena or by of
structural polarization effects. The motion of neutral
atoms with the participation of charged particles obeys the redistribution of
internal electromechanical stresses, in particular, due to the distortion of
the As and Ga sublattices of GaAs, the ionization of atomic cores, and/or the
excitation of a surface deformation wave. As a result, EM wave irradiation leads to change in the degree of dispersion, the effects
of forming, coagulation and sticking of droplets (Ga + As) beside of GaAs
precipitates and their redistribution over the surface.
Key words: surface, microwave
irradiation, gallium arsenide, photometric analysis, acoustic vibrations,
physicochemical transformations, semiconductor structures.
References
1.
Einspruch Norman G., Wisseman
William R., editors. GaAs Microelectronics, Volume 11, 1st Edition, Academic
Press, 1985, 472 p.
2.
Gladkov S.O. Fizika kompozitov. Termodinamika I
dissipativnye svoystva. [Physics of Composites. Thermodynamics and Dissipation
Properties]. Moscow, Nauka Publ., 1999, 329 p. (in
Russian).
3.
Lioubtchenko D.V., Räisänen A.V., Briantseva T.A., Lebedeva Z.M.,
Markov I.A. GaAs
Surface Modifications under Millimeter Wave Irradiation. Deffect and Diffusion
Forum, 2001. Vol. 194-199. P. 745–750.
4. ThompsonK., Booske J.H., Gianchandani Y., Cooper R., Bykov Yu., Eremeev A., Plotnikov I. Electromagnetic induction heating for cold wall
rapid thermal processing. Proc. 9th Int. Conf. Advanced Thermal Processing of Semiconductors. 2001, IEEE, P. 190-196.
5.
Briantseva T.A., Lebedeva Z.M., Markov I.A., Bullough T.J.,
Lioubtchenko D.V. Processes-induced
modification to the surface of crystalline GaAs measured by photometry. Appl. Surf. Sc. 1999. Vol. 143. p. 223–228.
6.
Frolov
Yu.G., Kolichestvennyye kharakteristiki kogezii i adgezii. Kurs kolloidnoy
khimii. Poverkhnostnyye yavleniya i dispersnyye sistemy. [Quantitative characteristics of cohesion and adhesion.
The course of colloid chemistry. Surface Phenomena and Disperse Systems.]. Moscow,
khimiya Publ., 1982, 399 p. (In
Russian)
7.
Fridkin
V.M. Dinamika reshetki i fazovyye perekhody. Sovremennaya kristallografiya.
Tom 2. Struktura kristallov [Lattice dynamics and phase transitions.
Modern crystallography. Vol 2. Crystal structure]. Moscow, Nauka Publ., 1981, 262
p. (In Russian)
8.
L.A. Shuvalov,
A.A. Urusovskaia, I.S. Joludev, A.V. Zalesskii, S.A Semiletov, B.N. Grechushnikov,
I.G. Chistiakov, S.A. Pikin. Sovremennaia kristallografia. Tom 4. Fizicheskie
svoistva kristallov [Modern crystallography. Vol. 4. Physical properties of
crystals]. Moscow, Nauka Publ., 1981, 496 p. (In Russian)
9.
Sivukhin
D.V. Obshchiy kurs fiziki. [General course of physics]. Moscow, Fizmatlit
Publ., 2002. Vol. 1. 792 p. (In Russian)
10. V.M. Koleshko, A.A. Kovalevskii. Policristallicheskie
plenki v poluprovodnikovoi elektronike [polycrystalline
films in semiconductor electronics]. Minsk, Nauka i Tekhnika Publ., 1978, 343 p.
(In Russian)
11. B.S.Bokshtein.
Diffuzionnaya
polzuchest'. Diffuziya v metallakh. [Diffusion
creep. Diffusion in metals]. Moscow, Metallurgiya Publ., 1978. 230 p. (In Russian)
12. Kikoin M., editor. Tablitsy
fizicheskikh velichin. Spravochnik [Tables of physical quantities. Reference
book]. Moscow, Atomizdat Publ., 1975. 1008 p. (In Russian)
13. Kittel Charles.
Introduction to Solid State Physics, Wiley, 2004, 704 p.
14. Yatsenko S.P. Galliy.
Vzaimodeystviye s metallami. [Gallium. Interaction with metals]. Moscow, Nauka
Publ., 1974. 220 p. (In Russian)
For citation:
T. A. Bryantseva D. V. Lioubtchenko, I. A.
Markov, Yu. A. Ten. Transformation
of the
surface layers of GaAs under
the influence of electromagnetic radiation
of millimeter range. Zhurnal Radioelektroniki
- Journal of Radio Electronics. 2019.
No. 6. Available at http://jre.cplire.ru/jre/jun19/9/text.pdf
DOI 10.30898/1684-1719.2019.6.9