"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 6, 2019

contents of issue      DOI  10.30898/1684-1719.2019.6.9     full text in Russian (pdf)  

UDC 621.382

Transformation of the surface layers of GaAs under the influence of electromagnetic radiation of millimeter range


T. A. Bryantseva 1, D. V. Lioubtchenko 2, I. A. Markov 1, Yu. A. Ten 1

1 Fryasino branch of Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Vvedensky Sq., 1, Fryazino, Moscow region, 141190 Russia

2 Center for Terahertz Research and Applications (CENTERA), Institute for High Pressure Physics, PAS, 29/37 Sokolowska Str, 01-142 Warsaw, Poland


The paper is received on  June 7, 2019


Abstract. The transformations of GaAs surface under influence of radiation of millimeter-wave electromagnetic waves with weak power were investigated. This investigation bases on varies of Ga and As masses at the near-surface layers of GaAs, depended on the power and duration of irradiation. The determination of elements Ga and As at GaAs surface under irradiation was fixed by fine chemical analysis using the method of photometric analyzes. The investigation samples were epitaxial structure of GaAs (n+-n-n++). It includes the surface etching in a concentrated HCl solution. That permits to only “free” Ga and As atoms are removed in the solution HCl without affecting the main crystal (selective etching method). “Free” Ga and As – the atoms, which are not related to the crystal lattice of GaAs, or enters into a chemical bond with O, or OH-. This method makes be possible to determining the quantitative of “free” Ga and As atoms in the surface layer of GaAs, both before and after irradiation, with an accuracy of up to 5%. The value of activation energy of mass (Ga and As) changing points at the nature of the surface transforming. It is shown, that during irradiation of the GaAs surface relaxation processes are observed. The interior energy in the surface layers and the surface electrical potential connects with the elastic or plastic deformation. At this, the deformation is accompanied by charged particles migration, including ions Ga+and As-. They migration is due to drift or diffusion way. As occurred, the effect of relaxation is caused either by electrolytic phenomena or by of structural polarization effects. The motion of neutral atoms with the participation of charged particles obeys the redistribution of internal electromechanical stresses, in particular, due to the distortion of the As and Ga sublattices of GaAs, the ionization of atomic cores, and/or the excitation of a surface deformation wave. As a result, EM wave irradiation leads to change in the degree of dispersion, the effects of forming, coagulation and sticking of droplets (Ga + As) beside of GaAs precipitates and their redistribution over the surface.

Key words: surface, microwave irradiation, gallium arsenide, photometric analysis, acoustic vibrations, physicochemical transformations, semiconductor structures.


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For citation:

T. A. Bryantseva D. V. Lioubtchenko, I. A. Markov, Yu. A. Ten. Transformation of the surface layers of GaAs under the influence of electromagnetic radiation of millimeter range. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 6. Available at http://jre.cplire.ru/jre/jun19/9/text.pdf

DOI  10.30898/1684-1719.2019.6.9