Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2023. №3
ContentsFull text in Russian (pdf)
DOI: https://doi.org/10.30898/1684-1719.2023.3.2
Au-GaAs INTERFACE FORMATION
DURING THE THERMAL EVAPORATION
OF GOLD IN VACUUM
T.A. Bryantseva1, Yu.V. Gulyaev2, V.E. Lyubchenko1, I.A. Markov1, Yu.A. Ten1
1 Kotelnikov IRE RAS (Fryazino Branch)
141190, Russia, Fryazino, Vvedenskogo sqr., 1
2 Kotelnikov IRE RAS, 125009, Russia, Moscow, Mokhovaya str., 11, b.7
The paper was received January 16, 2023.
Abstract. The possibility of using reagent-free modified water for preparing the GaAs surface in the process of creating microstrip structures with Au-GaAs contacts has been studied. It is shown that, compared with the well-known technique based on the use of deionized water, it is possible to significantly improve the quality of both rectifying and non-rectifying (ohmic) contacts obtained by the thermal evaporation of metals in vacuum. This is achieved by creating a layer of recrystallized gallium arsenide instead of a thin layer of natural oxide at the metal-semiconductor interface.
Key words: reagent-free modified water, gallium arsenide, oxides, rectifying and non-rectifying contacts.
Financing: State Assignment No. 122041900056-0.
Corresponding author: Igor Aleksandrovich Markov, iam176@fireras.su
References
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For citation:
Bryantseva T.A., Gulyaev Yu.V., Lyubchenko V.E., Markov I.A., Ten Yu.A. Au-GaAs interface formation during the thermal evaporation of gold in vacuum. Zhurnal radioelectroniki [Journal of Radio Electronics] [online]. 2023. №3. https://doi.org/10.30898/1684-1719.2023.3.2 (In Russian)