Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2023. 3

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DOI: https://doi.org/10.30898/1684-1719.2023.3.2






T.A. Bryantseva1, Yu.V. Gulyaev2, V.E. Lyubchenko1, I.A. Markov1, Yu.A. Ten1


1 Kotelnikov IRE RAS (Fryazino Branch)

141190, Russia, Fryazino, Vvedenskogo sqr., 1

2 Kotelnikov IRE RAS, 125009, Russia, Moscow, Mokhovaya str., 11, b.7


The paper was received January 16, 2023.


Abstract. The possibility of using reagent-free modified water for preparing the GaAs surface in the process of creating microstrip structures with Au-GaAs contacts has been studied. It is shown that, compared with the well-known technique based on the use of deionized water, it is possible to significantly improve the quality of both rectifying and non-rectifying (ohmic) contacts obtained by the thermal evaporation of metals in vacuum. This is achieved by creating a layer of recrystallized gallium arsenide instead of a thin layer of natural oxide at the metal-semiconductor interface.

Key words: reagent-free modified water, gallium arsenide, oxides, rectifying and non-rectifying contacts.

Financing: State Assignment No. 122041900056-0.

Corresponding author: Igor Aleksandrovich Markov, iam176@fireras.su


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For citation:

Bryantseva T.A., Gulyaev Yu.V., Lyubchenko V.E., Markov I.A., Ten Yu.A. Au-GaAs interface formation during the thermal evaporation of gold in vacuum. Zhurnal radioelectroniki [Journal of Radio Electronics] [online]. 2023. №3. https://doi.org/10.30898/1684-1719.2023.3.2 (In Russian)