The influence of overgrowth of doped by diffusion and ion implantation areas of heterostructures on distributions of dopants concentration

 

E. L. Pankratov ¹, E. A. Bulaeva^1,2

 ¹Nizhny Novgorod State University

² Nizhny Novgorod State University of Architecture and Civil Engineering

 

The paper is received on April 16, 2016

 

Abstract. In this paper we consider the influence of overgrowth of doped by diffusion and ion implantation areas of heterostructures on distributions of concentrations of dopants. Several conditions to increase sharpness of p-n-junctions (single and framework bipolar transistors), which were manufactured during considered technological process, have been determined. At the same time we analyzed influence of speed of overgrowth of doped areas and mechanical stress in the considered heterostructure on distribution of concentrations of dopants in the structure.

Keywords: p-n-heterojunctions; mechanical stress; overgrowth.