О способе увеличения плотности элементов однофазного
многоуровнего инвертора
Е. Л. Панкратов, Е. А. Булаева
Нижегородский государственный
университет им. Н.И. Лобачевского
Статья
поступила в редакцию 3 ноября 2016 г.
Аннотация. В данной работе рассматривается способ уменьшения размеров
элементов однофазного многоуровнего инвертора на основе биполярных
гетеротранзисторов с одновременным увеличением их плотности. Предлагаемый метод
базируется на формировании гетероструктуры необходимой конфигурации,
диффузионном или ионном легировании необходимых участков гетероструктуры и
оптимизации отжига примеси и/или радиационных дефектов.
Ключевые слова: инвертор; биполярный гетеротранзистор; оптимизация
технологического процесса; аналитический метод прогноза процессов.
Abstract. In this paper we analyzed
manufacturing of single-phase multi-level inverter based on bipolar
heterotransistors. On the basis of the analysis we formulate recommendations to
decrease dimensions of elements of the inverter. At the same time in the framework
of the approach one can obtain increasing of density of the above elements. In
the framework of the considered approach it is necessary to manufacture a
heterostructure with required configuration (manufacturing of required quantity
of layers of the heterostructure, manufacturing of several sections framework
required layers of heterostructure). After manufacturing of the heterostructure
we consider doping of the above sections by diffusion or by ion implantation.
The doping should be finished by optimized annealing of dopant and/or radiation
defects. The optimization of annealing gives a possibility to obtain balance
between decreasing of dimensions of elements of the inverter with increasing of
density of the above elements and increasing and improvement of another
characteristics of the considered elements (decreasing of heating during
functioning and increasing of switching time of p-n-junctions as
single elements and framework transistors). We also introduce an analytical approach
to analyze mass and heat transport during technological process and functioning
of these devices. The approach gives a possibility to take into account at one
time: variation in space and time physical parameters (diffusion and heat
diffusion coefficient, charge carriers mobility et al), nonlinearity of the
considered processes.
Keywords: inverter; bipolar heterotransistor;
optimization of technological process; analytical approach for prognosis of processes.