Absorption in Silicon Carbide in the Millimeter-Wave Range
E. E. Chigryai, B. M.
Garin, R. N. Denisyuk, D. S. Kalenov, I. P. Nikitin
Kotel'nikov Institute of Radio-engineering and Electronics
of Russian Academy of Sciences
The paper is received on October 19,
Dielectric properties of high-purity
semi-insulating single-crystal 6H silicon carbide are investigated in the
millimeter-wave (MM) range. A method and a setup are developed for measuring
ultralow dielectric loss in the long-wavelength part of the millimeter-wave
band at frequencies below 80 GHz in samples with relatively small transverse
size (~20 mm) and arbitrary thickness (~1 mm or less). The
method and the setup are based on a semisymmetric open resonator with spherical
mirror with radius of curvature of 40 mm. The value
of loss tangent measured at 69.4 GHz and room temperature is tand ~ 6×10-5, which is the lowest
value ever observed in this material. This value is significantly lower than that
observed in well-known low-loss materials such as single-crystal sapphire and
quartz but exceeds the loss value in the best samples of CVD diamond. However,
SiC has lower production cost compared to the latter. The loss mechanisms in silicon carbide are
revealed. At low frequencies <20 GHz, the loss is due to absorption by free
charge carriers. In the region 60-400 GHz, the loss can be attributed to the intrinsic
lattice loss due to two-phonon absorption processes.
words: silicon carbide, dielectric loss, open
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