"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 11, 2019

contents of issue      DOI  10.30898/1684-1719.2019.11.15    full text in Russian (pdf)  

UDC 537.9

AlN Nanostructured Piezoelectric Films obtained by Reactive RF Magnetron Sputtering


A. F. Belyanin 1, À. S. Bagdassaryan 2,3, S. À. Nalimov 1, Å. R. Pavlyukova 4

1 Central Research Technological Institute “Technomash”, 4, Ivan Franko Str., Moscow 121108, Russia

2 Scientific Engineering Center “Technological developments of telecommunication and radio frequency identification”, JSC, 1 (4), Sukharevskaya Sq., Moscow, 127051, Russia

3 Krivosheyev Institute of Radio, 16, Kazakova Str., Moscow 105064, Russia

4 Moscow Institute of Physics and Technology (State University), 9, Institutskiy lane, Dolgoprudny, Moscow Region, 141701, Russia


The paper is received on November 11, 2019


Abstract. The conditions for obtaining the textured AlN films on substrates of amorphous and crystalline materials by the method of reactive RF magnetron sputtering of an Al target in an atmosphere of argon and nitrogen mixture are presented. By electron microscopy, X-ray diffractometry, energy dispersive spectroscopy, and Raman spectroscopy it is demonstrated the influence of the manufacturing conditions (composition and pressure of the gas mixture, temperature and material of immovable and moving substrates) on the growth rate and structure (crystallinity degree, size and orientation of crystallites, lattice parameters) of AlN films. The relationship between the film structure and the position of the fixed substrates relative to the target-sputtering region is demonstrated. It is discovered that AlN films consist of crystalline and amorphous phases, while the crystallites have the form of fibers, and the amorphous phase occupies the gap between the fibers. The crystallites of AlN films, regardless of the substrate material, were axially textured along the crystallographic direction <0001>. Under the certain parameters, at sapphire substrates there was a unification of the fibers making up the film into wafers with the formation of a limited texture. The crystallite size of AlN films was 25–65 nm and did not depend on the degree of crystallinity. The films having a fibrous or plate structure demonstrated the piezoelectric properties. The influence of the piezoelectric AlN film structure on the parameters of SAW devices is researched. The possibility of the piezoelectric efficiency control for AlN films through the Raman spectra is demonstrated.

Keywords: aluminum nitride films, magnetron sputtering, piezoelectric materials, surface acoustic wave devices, Raman spectroscopy.


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For citation:

Belyanin A.F., Bagdassaryan A.S., Nalimov S.A., Pavlyukova E.R. AlN Nanostructured Piezoelectric Films obtained by Reactive RF Magnetron Sputtering.  Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 11. Available at http://jre.cplire.ru/jre/nov19/15/text.pdf

DOI  10.30898/1684-1719.2019.11.15