"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 11, 2019

contents of issue      DOI  10.30898/1684-1719.2019.11.6    full text in Russian (pdf)  

UDC 004.77

Enhancement of conduction electron reflection specularity in gold films coated with Langmuir-Blodgett nanolayers

 

L. A. Galchenkov, I. I. Pyataikin

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Mokhovaya 11-7, Moscow, 125009, Russia

 

The paper is received on October 30, 2019

 

Abstract. The effect of organic nanometer-thick coatings on the size effect in gold films is studied. It is found that coating the surface of a gold film with Langmuir-Blodgett (LB) multilayers on the basis of surface-active derivatives of dimethyltetrathiafulvalene (DMTTF) and tetracyanoquinodimethane (TCNQ) increases the specularity of reflection of conduction electrons from the surface covered with the LB nanolayers. This enhancement of the specularity manifests itself as a decrease of residual resistivity of the film at liquid helium temperatures. The found ability to reduce the residual resistance of the film, allowed us to identify Kondo-like features in its electronic transport properties, which had been "buried" under the residual resistance and not manifested themselves before the LB coating was applied. In the article, it is discussed how the found effect can affect such important parameters, characterizing the interaction of microwaves and the gold films covered with considered LB overlayers, as reflection, transmission, and absorption coefficients.

Key words: Langmuir-Blodgett films, dimethyltetrathiafulvalene (DMTTF), tetracyanoquinodimethane (TCNQ), size effect, specularity of reflection of conduction electrons, Kondo effect, microwave reflection coefficient, microwave absorption coefficient.

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For citation:

Galchenkov L.A., Pyataikin I.I. Enhancement of conduction electron reflection specularity in gold films coated with Langmuir-Blodgett nanolayers. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 11. Available at http://jre.cplire.ru/jre/nov19/6/text.pdf

DOI  10.30898/1684-1719.2019.11.6