Journal of Radio Electronics. eISSN 1684-1719. 2024. №10

Full text in Russian (pdf)

DOI: https://doi.org/10.30898/1684-1719.2024.10.17

C₂ MODEL OF THE WIDE-BANDGAP MOSFET

V.N. Biryukov

Institute for Radio Engineering Systems and Control of Southern Federal University,
347900, Russia, Taganrog, Nekrasovsky str, 44

The paper was received June 6, 2024.

Abstract. A set of new regional (segmented) models of MOS transistors is proposed. In the models, the current in saturation is not considered independently, but as an extrapolation of the current of the physical model in the unsaturated (linear) mode by Padé approximant. The first two coefficients of the approximant are determined from the condition of continuity of the transistor current at the boundary of the saturated region along with two derivatives; the remaining coefficients are determined by parametric optimization based on measured current-voltage characteristics. This saturation current model is invariant with respect to the model for the unsaturated mode and the physics of processes at current saturation. These models were created primarily for simulating transistors manufactured using various wide-gap semiconductor technologies: silicon carbide, gallium nitride and diamond. The results of modeling GaN and SiC transistors with low root mean square error are presented.

Keywords: MOSFET, compact model, C₂-continuity, silicon-carbide (SiC), Gallium-nitride (GaN), Diamond (C)

Corresponding author: Biryukov Vadim Nikolaevich, vnbiryukov@yandex.ru

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For citation:

Biryukov V.N. C₂ Model of the Wide-Bandgap MOSFET. // Journal of Radio Electronics. – 2024. – №. 10. https://doi.org/10.30898/1684-1719.2024.10.17 (In Russian)