Journal of Radio Electronics. eISSN 1684-1719. 2025. ¹10

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DOI: https://doi.org/10.30898/1684-1719.2025.10.5  

 

 

 

EXTRACTION OF MOSFET MODEL PARAMETERS

IN UNIFORM APPROXIMATION

 

V.N. Biryukov

 

Institute for Radio Engineering Systems and Control of Southern Federal University,

347900, Russia, Rostov Region, Taganrog, Nekrasovsky, 44

 

The paper was received June 25, 2025.

 

Abstract. To the best our knowledge, this work is the first attempt of extraction of MOSFET parameters in the uniform (Chebyshev) approximation. The proposed optimization algorithm uses random descent with a random number generator whose probability density is best suited for the ravine structure of the objective function in such a way as to obtain a compromise between the probability of a successful attempt and the magnitude of the descent step. The proposed distribution reduces the descent time by two orders of magnitude compared to the uniform one. By replacing the root-mean-square approximation with a uniform one, the maximum error of the model can be significantly reduced, which improves the accuracy of the worst-case analysis of electronic circuits.

Key words: extraction of MOSFET parameters, least squares, random optimization, uniform approximation.

Corresponding author: Biryukov Vadim Nikolaevich, vnbiryukov@yandex.ru

 

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For citation:

Biryukov V.N. Extraction of transistor model parameters in uniform approximation // Journal of Radio Electronics. – 2025. – ¹. 10. https://doi.org/10.30898/1684-1719.2025.10.5