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Electrophysical properties of room-temperature ruthenium micro- and nano-bolometers

 

A. S. Ilin, I. A. Cohn, A. S. Sobolev, A. G. Kovalenko

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Mokhovaya 11-7, Moscow, 125009, Russia

 

 The paper is received on November 30, 2019

 

Abstract. Ruthenium micro- and nano-bridges for uncooled terahertz bolometers operating at room temperature are presented. The bridge samples have a thickness of 20 nm and planar dimensions of 2×1 μm, and 2×0.1 μm, and were fabricated using electron beam lithography on oxidized single-crystal silicon substrates. The temperature dependence of the resistance and the I–V characteristics were measured. Based on the obtained characteristics, the temperature coefficient of resistance for thin-film samples, the differential resistance of the samples, and the electric voltage responsivity S_v were calculated. The latter was S_v = 87 V/W for the bridges 1 μm wide and S_v ≈ 500 V/W for the 0.1 μm wide. The obtained responsivity exceeds that of niobium bolometers known from the literature, which, in our opinion, indicates the prospects of using ruthenium as an absorber for terahertz bolometers operating without cooling.

Key words: ruthenium, uncooled bolometer, electron-beam lithography, EBL, thin films, room temperature, voltage responsivity, temperature coefficient of resistance.

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For citation:

Ilin A.S., Cohn I.A., Sobolev A.S., Kovalenko A.G. Electrophysical properties of room-temperature ruthenium micro- and nano-bolometers. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 12. Available at http://jre.cplire.ru/jre/dec19/10/text.pdf

DOI  10.30898/1684-1719.2019.12.10