PACS number(s): 78.66.Fd

Photoreflectance from n-i-p-i-n delta-doped GaAs heterostructures

 

L.P. Avakyants¹, P.Yu. Bokov¹, I.V. Bugakov¹, A.V. Chervyakov¹, T.P. Kolmakova²

¹ M.V. Lomonosov Moscow State University, physics faculty, general physics department

 ² JSC «Optron», Moscow, Russia, 105318

 

Received January 15, 2010

 

Abstract. GaAs n-i-p-i-n heterostructures with Be-delta doped layers have been investigated by photoreflectance spectroscopy. The magnitudes of the built-in electric fields and effective band gap energy have been calculated from the analysis of Franz-Keldysh oscillations. Observed increase in energy of interband transition is explained by Burstein-Moss effect due to photogeneration of carriers in delta-doped layer.

Keywords: photoreflectance, delta-doped heterostructures, GaAs.