PACS number(s): 78.66.Fd
Photoreflectance from n-i-p-i-n delta-doped GaAs heterostructures
L.P. Avakyants1, P.Yu. Bokov1, I.V.
Bugakov1, A.V. Chervyakov1, T.P. Kolmakova2
M.V. Lomonosov Moscow State University, physics faculty, general physics
JSC «Optron», Moscow, Russia, 105318
Received January 15, 2010
Abstract. GaAs n-i-p-i-n
Be-delta doped layers
have been investigated by photoreflectance spectroscopy. The magnitudes of the
built-in electric fields and effective band gap energy have been calculated from
the analysis of Franz-Keldysh oscillations. Observed
increase in energy
of interband transition is explained by Burstein-Moss effect due to
photogeneration of carriers in delta-doped layer.
delta-doped heterostructures, GaAs.