Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2020. No. 8
ContentsFull text in English (pdf)
DOI https://doi.org/10.30898/1684-1719.2020.8.8
UDC 621.382.32
STATIC MODEL OF POWER SILICON MOSFET
V. N. Biryukov, V. R. Haritonova, D. A. Portnykh
Institute for Radio Engineering Systems and Control of Southern Federal University, Nekrasovsky, 44, Taganrog 347900, Russia
The paper is received on July 14, 2020
Abstract. This paper introduces a model of high-voltage long-channel MOS field-effect transistor. The new compact model is produced from a one-dimensional Shockley model of a MOSFET by introducing the dependence of the mobility of charge carriers on the electric field of the gate. Extensions are made for improved modeling of high-voltage MOSFETs, and one new parameter is introduced to correct the unsaturated region of the known model. The current in the saturated mode of the proposed model is obtained by non-linear extrapolation of the transistor current in the unsaturated mode by Padé approximant so that the current is maintained continuous along with its two first derivatives. The model has only four parameters, which are determined by the experimental current-voltage characteristics by the least squares method. The results of an experimental verification of the modeling accuracy of several high-power n and p-channel MOSFETs are presented.
Keywords: C2-continuity, characterization, compact model, least squares, power MOSFET.
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For citation:
Biryukov V.N., Haritonova V.R., Portnykh D.A.. Static model of power silicon MOSFET. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2020. No.8. https://doi.org/10.30898/1684-1719.2020.8.8