Локальное измерение диэлектрических свойств материалов с помощью терагерцовой джозефсоновской спектроскопии

Abstract

In the paper a method based on Josephson spectroscopy for local measurement of real dielectric permittivity of different materials with low losses is demonstrated. Dielectric permittivities of r-cut sapphire ε _sapphire = 9.6 at f =155,2 GHz and (001) NdGaO ₃ ε _NGO = 23 at f =106,4 GHz are obtained.

• Terahertz electronics
• superconductivity
• Josephson junction

Аннотация (на русском)

Локальное измерение диэлектрических свойств материалов с помощью терагерцовой джозефсоновской спектроскопии

В работе продемонстрирована методика локального определения действительной части диэлектрической проницаемости различных материалов c малым тангенсом угла потерь, основанная на джозефсоновской спектроскопии, в терагерцовой области частот. Для () r-сапфира и (001) NdGaO ₃ получены значения ε _sapphire = 9.6 при частоте f =155,2 ГГц и ε _NGO = 23 при частоте f =106,4 ГГц, соответственно.

For citation

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