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Journal of Radio Electronics Online scientific journal · eISSN 1684-1719
2019, № 4 · PHYSICAL PROBLEMS OF ELECTRONICS

Picosecond self-modulation of the fundamental absorption of a light pulse in the GaAs, that generates the stimulated emission, causing interband electron oscillations

N.N. Ageeva1, I.L. Bronevoi1, D.N. Zabegaev1, A.N. Krivinosov1

1 Kotelnikov IRE RAS, Moscow, Russia

Abstract

A brief review of experimental results is presented on discovery of a new nonlinear phenomenon - picosecond self-modulation of the fundamental absorption of a picosecond probe light pulse in a thin layer of GaAs that generates stimulated intense picosecond emission. It is explained by the synchronization of two modulations of the electron population of energy levels in the conduction band. One is created by the probing light. The other is created at the bottom of the zone by picosecond interband oscillations of electrons in the emission field and is transmitted up the zone to restore the detailed equilibrium of electron transitions with the radiation and absorption of LO phonons. Synchronization of modulations occurs in order to achieve similar detailed equilibrium.

  • picosecond
  • self-modulation
  • fundamental light absorption
  • stimulated emission
  • synchronization
  • interband electron oscillations
  • GaAs
  • пикосекундный
  • автомодуляция
  • фундаментальное поглощение света
  • стимулированное излучение
  • синхронизация
  • межзонные осцилляции электронов
Аннотация (на русском)

Пикосекундная автомодуляция фундаментального поглощения импульса света в GaAs, генерирующем стимулированное излучение, вызывающее межзонные осцилляции электронов

Представлен краткий обзор экспериментальных результатов, обнаруживших новое нелинейное явление - пикосекундную автомодуляцию фундаментального поглощения пикосекундного зондирующего импульса света в тонком слое GaAs, генерирующем стимулированное интенсивное пикосекундное излучение. Она объясняется синхронизацией в зоне проводимости двух модуляций заселенности электронами энергетических уровней. Одна создается зондирующим светом. Вторая создается на дне зоны пикосекундными межзонными осцилляциями электронов в поле излучения и транслируется вверх по зоне для восстановления детального равновесия переходов электронов с излучением и поглощением LO-фононов. Синхронизация модуляций происходит для аналогичного детального равновесия.

For citation

Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivinosov A.N. Picosecond self-modulation of the fundamental absorption of a light pulse in the GaAs, that generates the stimulated emission, causing interband electron oscillations // Journal of Radio Electronics. – 2019. – No. 4. https://doi.org/10.30898/1684-1719.2019.4.2

References

  1. Ageeva N.N., Bronevoi I.L., Krivonosov A.N., Stegantsov S.V. Ultrafast Self-Modulation of the Optical Absorption Spectrum Under Conditions of Both the Ultrashort Optical Pumping and Superluminescence in GaAs. Semiconductors. 2006. Vol.40, No.7. P.785-793.
  2. Ageeva N.N., Bronevoi I.L., Krivonosov A.N., Nalet T.A., Stegantsov S.V. Participation of Electron-Phonon Interaction in the Ultrafast Self-Modulation of Absorption of Light in GaAs. Relation of Modulation of Absorption with the Spectrum of Stimulated Radiation in GaAs, Semiconductors. 2007. Vol.41. No.12. P.1398-1404.
  3. Ageeva N.N., Bronevoi I.L., Krivonosov A.N., Nalet T.A. Cyclic Behavior of Ultrafast Self-Modulation of the Light-Absorption Spectrum under Conditions of Pump and Stimulated Emission in GaA. Semiconductors. 2008. Vol.42, No.9. P.1037-1043.
  4. Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N. Oscillations of Absorption of a Probe Picosecond Light Pulse Caused by Its Interaction with Stimulated Picosecond Emission of GaAs. JETP. 2015. Vol.120, No.4. P.664-671.
  5. Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N. Self-Synchronization of the Modulation of Energy-Levels Population with Electrons in GaAs Induced by Picosecond Pulses of Probe Radiation and Intrinsic Stimulated Emission. Semiconductors. 2016. Vol.50, No.10. P.1312-1321.
  6. Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N. Repetition of the Shape of the Ultrafast Self-Modulation of the Optical Absorption Spectrum upon Varying the Energy of Pulse of GaAs Pumping. Semiconductors. 2010. Vol.44, No.10. P.1285-1288.
  7. Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N. Subterahertz Self-Oscillations of Depletion of Electron Populations in the Conduction Band of GaAs in the Presence of Pumping and Intrinsic Stimulated Radiation. Semiconductors. 2010. V.44, No.9. P.1121-1128.
  8. Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N. Modulation of characteristics of picosecond stimulated emission of GaAs, recommendations about its use and suppression. Visualization of the hole, "burnt" by emission, in the region of amplification of light absorption spectrum. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2012. No. 10. Available at http://jre.cplire.ru/jre/oct12/3/text.html. (In Russian)
  9. Ageeva N.N., Bronevoi I.L., Krivonosov A.N. Subterahertz Self-Oscillations in Ultrafast Self-Modulation of Optical Absorption in GaAs. Semiconductors. 2008. Vol.42. No.12. P.1395-1402.
  10. Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N. Switching of Spectral Modes of Picosecond Stimulated Radiation of GaAs due to Stimulated Raman Scattering in the Presence of Interband Oscillations of Electrons in the Radiation Field. Journal of Communications Technology and Electronics. 2018. No.63(10). P.1235-1244.
  11. Bronevoi I.L., Krivonosov A.N., Perel’ V.I. Phonon Oscillations in the Spectrum of the Reversible Bleaching of Gallium Arsenide under Interband Absorption of a High-Power Picosecond Light Pulse. Solid State Communications. 1995. Vol.94, No. 9. P.805-808.
  12. Ageeva N.N., Bronevoi I.L., Krivonosov A. N., Kumekov S.E., Stegantsov S.V. "LO-Phonon" Correlation between Picosecond Superluminescence Spectrum and Special Features of Absorption Spectrum in GaAs for Non-Fermi Distribution of Carriers Induced by Picosecond Light Pulse. Semiconductors. 2002. Vol.36, No.2. P.136-140.
  13. Ageeva N.N., Bronevoi I.L., Krivonosov A. N., Kumekov S.E., Nalet T.A., Stegantsov S.V. Modulation of the Characteristics of Intense Picosecond Stimulated Emission from GaAs. Semiconductors. 2005. Vol.39. No.6. P.650-657.
  14. Vasil'ev P.P. Experimental observation of coherent optical oscillations in picosecond semiconductor lasers under strong-field conditions. Quantum Electronics. 1994. Vol.24. No.6. P.540-542.