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Journal of Radio Electronics Online scientific journal · eISSN 1684-1719
2025, № 11 · PHYSICAL PROBLEMS OF ELECTRONICS

Investigation of the influence of sensitive layer immobilization on the electrical characteristics of a thin-film BAW resonator as determined by structural parameters

N.M. Zhilin1,2,3, T.N. Ulaeva1,2,3, N.A. Chirikov1,2, V.N. Shchekaturova3, A.N. Kuznetzov1,2

1 Omsk Scientific Center SB RAS (Institute of Radiophysics and Physical Electronics), Omsk, Russia
2 Omsk Research Institute of Instrument Engineering, Omsk, Russia
3 Dostoevsky Omsk State University, Omsk, Russia
Full text DOI: 10.30898/1684-1719.2025.11.1 UDC 621.372.4 EDN OLVKRN

Abstract

The impact of a deposited sensing layer on the electrical characteristics of thin-film bulk acoustic wave (BAW) resonators with two Bragg reflector designs is examined: (i) six Mo-Ti quarter-wave pairs and (ii) a hybrid reflector of three Mo-Al pairs plus one Mo-SiO2 pair. A positive photoresist FP-383 served as the sensing material and was applied by drop-casting. Resonators employing the Mo-Al-SiO2 reflector maintain their frequency response and quality factor with negligible change, whereas Mo-Ti reflectors exhibit resonance-frequency shifts, a reduced resonant bandwidth and an increased quality factor. These behaviors point to the governing roles of residual stress and boundary conditions in device performance. The results highlight the need for careful reflector-material selection to enhance sensitivity and indicate strong potential for integrating BAW resonators into microelectronic gas sensors.

  • Bulk Acoustic Wave (BAW)
  • bragg reflector
  • thin-film resonator
  • sensor
  • immobilization
  • sensing layer
Аннотация (на русском)

Исследование влияния иммобилизации чувствительного слоя на электрические характеристики тонкопленочного ОАВ-резонатора от конструкционных параметров

В работе исследовано влияние чувствительного слоя на электрические характеристики тонкопленочного ОАВ-резонатора с брэгговским отражателем на основе 6 пар слоев молибдена-титана (Mo-Ti) и ОАВ-резонатора с брэгговским отражателем на основе трех пар слоев молибдена-алюминия и одной пары молибдена-диоксида кремния (Al-Mo-SiO2). В качестве чувствительного материала использовался позитивный фоторезист, нанесенный капельным методом. Показано, что резонаторы с брэгговским отражателем Al-Mo-SiO2 сохраняют частотные параметры и добротность практически без изменений, в то время как структуры с брэгговским отражателем Mo-Ti демонстрируют сдвиг резонансных частот, уменьшение резонансного промежутка и рост добротности. Изменения частотных характеристик подтверждают влияние остаточных напряжений и граничных условий на работу устройств. Результаты подтверждают необходимость выбора материалов брэгговского отражателя для повышения чувствительности и перспективность применения ОАВ-резонаторов в составе микроэлектронных газовых сенсоров.

For citation

Zhilin N.M., Ulaeva T.N., Chirikov N.A., Shchekaturova V.N., Kuznetzov A.N. Investigation of the influence of sensitive layer immobilization on the electrical characteristics of a thin-film BAW resonator as determined by structural parameters // Journal of Radio Electronics. – 2025. – No. 11. https://doi.org/10.30898/1684-1719.2025.11.1

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