Mechanical stress analysis of structural layers in a microelectronic BAW resonator at different deposition temperatures
Abstract
Thin films of molybdenum, aluminum, silicon dioxide, and aluminum nitride were deposited by magnetron sputtering for use as the constituent layers of a bulk acoustic wave (BAW) microelectronic resonator. The effect of substrate temperature during sputtering on the mechanical stress in the films was determined. Optimal sputtering conditions were identified that minimize intrinsic stress across the films. Based on these conditions, prototype microelectronic resonators were fabricated, operating at 3.9 GHz with a quality factor of 573.
- BAW resonator
- bragg reflector
- temperature dependence
- mechanical stress
- thin films
Аннотация (на русском)
Исследование механических напряжений конструкционных слоев микроэлектронного ОАВ-резонатора от температуры формирования
Исследованы тонкие пленки молибдена, алюминия, диоксида кремния и нитрида алюминия, полученные методом магнетронного распыления, предназначенные для использования в качестве слоев микроэлектронного резонатора на объемных акустических волнах. Определено влияние температуры подложки в процессе магнетронного распыления на механические напряжения в пленках. Выбраны оптимальные технологические режимы магнетронного распыления, при которых получены минимальные значения механических напряжений в пленках. На их основе изготовлены опытные образцы микроэлектронных резонаторов, работающие на частоте 3,9 ГГц с добротностью 573 единицы.
For citation
Chirikov N.A., Ulaeva T.N., Kuznetzov A.N., Zhilin N.M. Mechanical stress analysis of structural layers in a microelectronic BAW resonator at different deposition temperatures // Journal of Radio Electronics. – 2025. – No. 11. https://doi.org/10.30898/1684-1719.2025.11.2
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