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Journal of Radio Electronics Online scientific journal · eISSN 1684-1719
2019, № 10 · SOLID STATE ELECTRONICS

Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures

P.A. Zmanovsky1,2, N.D. Il'yushina3,4, M.M. Abdulov1,2, A.K. Smirnova1,2,3,4, M.N. Drozdov5,6, A.A. Vedeneev1,2,3, M.P. Dukhnovsky1,2

1 АО «НПП «Исток» им. Шокина», Friazino, Russia
2 JSC “RPC “Istok” named after Shokin”, Russia
3 РТУ МИРЭА, Russia
4 RTU MIREA, Russia
5 Институт физики микроструктур Российской академии наук, Nizhnii Novgorod, Russia
6 Institute for Physics of Microstructures Russian Academy of Sciences, Russia
Full text (PDF) DOI: 10.30898/1684-1719.2019.10.4 UDC 621.382 EDN PWRHOQ

Abstract

In the present paper by means of secondary ion mass-spectrometry we study Si atoms distribution in MOCVD AlGaAs/InGaAs/GaAs pHEMT-structures with the background doping. The C-V measurements of such structures and Auger electron spectroscopy study of SiH4 interaction with GaAs(001) are also presented below.

  • вторичная ионная масс-спектрометрия
  • эпитаксия
  • pHEMT-структура
  • secondary ion mass-spectrometry
  • epitaxy
  • pHEMT-structure
Аннотация (на русском)

Профили легирования AlGaAs/InGaAs/GaAs pHEMT-структур

В настоящей работе посредством вторичной ионной масс-спектрометрии изучается распределение атомов кремния в AlGaAs/InGaAs/GaAs pHEMT-структурах с фоновым легированием, выращенных по технологии МОС-гидридной эпитаксии. Проведен сравнительный анализ C-V характеристик таких структур, с помощью электронной оже-спектроскопии изучено взаимодействие SiH4 c поверхностью GaAs(001).

For citation

Zmanovsky P.A., Il'yushina N.D., Abdulov M.M., Smirnova A.K., Drozdov M.N., Vedeneev A.A., Dukhnovsky M.P. Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures // Journal of Radio Electronics. – 2019. – No. 10. https://doi.org/10.30898/1684-1719.2019.10.4

References

  1. Protasov D.Yu., Gulyaev D.V., Bakarov A.K., Toropov A.I., Zhuravlev K.S. The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping. Journal of Physics: Conference Series, 2017, Vol. 864, pp. 012051-012054.
  2. Protasov D.Yu., Zhuravlev K.S. The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors. Solid-State Electronics, 2017, Vol. 129, pp. 66-72.
  3. Takeda J., Isono R., Fujio S., Kamogawa H., Sahara M., Meguro T., Otoki Y. Degradation of pHEMT performance in BiHEMTs caused by thermal history during HBT growth and suggestions for improvement. CS MANTECH Conference, Portland, Oregon, USA, May 17th - 20th, 2010, pp 281-284.