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Journal of Radio Electronics Online scientific journal · eISSN 1684-1719
2024, № 7 · SOLID STATE ELECTRONICS

Photosensitive CCD sensors designed on a silicon epitaxial structure

A.M. Maklakov1,2, E.V. Kaevitser3,4, D.A. Fedorov1

1 Scientific & Production Enterprise "Pulsar", Moscow, Russia
2 MIREA - Russian Technological University, Moscow, Russia
3 Fryazino Branch of Kotelnikov IRE RAS, Friazino, Russia
4 National University of Science and Technology (MISiS), Moscow, Russia
Full text DOI: 10.30898/1684-1719.2024.7.3 UDC 621.383.7.004.942 EDN UCFSOU

Abstract

With the help of instrument-technological modeling, modulation transmission functions for two CCD structures operating in the time delay and accumulation mode were obtained.

  • resolution
  • CCD-matrix
  • TCAD modeling
Аннотация (на русском)

Фоточувствительный ПЗС ВЗН, разработанный на кремниевой эпитаксиальной структуре

С помощью приборно-технологического моделирования получены функции передачи модуляции для двух структур ПЗС, работающих в режиме временной задержки и накопления.

For citation

Maklakov A.M., Kaevitser E.V., Fedorov D.A. Photosensitive CCD sensors designed on a silicon epitaxial structure // Journal of Radio Electronics. – 2024. – No. 7. https://doi.org/10.30898/1684-1719.2024.7.3

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