Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

JOURNAL OF RADIO ELECTRONICS

(zhurnal radioelektroniki)

online journal, eISSN 1684-1719

Editor-in-chief academician Yu.V. Gulyaev

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SOLID STATE ELECTRONICS

2000-2007
2008-2014
2015-2018
2019

2000-2007:

Electro physical and photo electrical characteristics of transistor structures with distributed p + n junction and instruments on their basis.
B. S. Muravskiy, G.P. Rubtsov, L. R. Grigorian, O. G. Kulikov

On the Influence of Moving Domain Boundary on Spectral Properties of Confinemented Magnetostatic Waves.
E.A. Vilkov, V.G. Shavrov, N.S. Shevjachov.

Three Parameters Model of Phase Transitions in Ferromagnetic Alloy Ni-Mn-Ga.
V.D. Buchelnikov, D.L. Dalidovich, A.T. Zayak, V.G. Shavrov.

Observation of the one-way shape memory effect in Ni-Mn-Fe-Ga Heusler alloy due to the magnetic field induced martensite – austenite transition.
V.G. Shavrov, A.A. Glebov, I.E. Dikshtein, V.V. Koledov, D.A. Kosolapov,  E.P. Krasnoperov, T. Takagi, A.A. Tulaykova, A.A. Cherechukin.

Спиральная структура в антиферромагнетиках с магнитоэлектрическим эффектом.
А. А. Халфина

Spiral structure in antiferromagnetics with magnetoelectric effect.
A. A. Khalfina

Effect of read-write memory of shape, based on magneto-induced structural transition in polycrystals of ferromagnetic alloy Ni2,15Mn0,81Fe0,04Ga.
I.D. Borisenko, K.V. Boyarchuk, V.D. Buchel'nikov, I.E. Dikshtein, D.I. Ermakov, V.V. Koledov, E.P. Krasnoperov, V.V. Khovailo, T. Takagi, T.O. Khudaverdyan, V.G. Shavrov.

Magnetic properties and martensite domain structure in magneto-structural transition of  Ni2,19Mn0,81Ga.
V.D. Buchel'nikov, I.D. Borisenko, K.V. Boyarchuk, I.E. Dikshtein, D.I. Ermakov, V.V. Koledov, D.A. Filippov, V.V. Khovailo, T.O. Khudaverdyan, V.G. Shavrov.

On delay of high-frequency modulating signals in avalanche photodiodes.
V.I. Grigoryevsky, A.A. Lichmanov, Yu.O. Yakovlev.

Temperature Parameters of Thin-film Varistors.
Mamedov A.K.ogly.

Temperature-frequency Characteristics of Structures with Schottky Barrier.
Mamedov Azer Karman ogly.

Electron-Electronic Interactions in Moderataly Doped Heterojunction AlxGa1-x/GaAsF.
A. B. Dubois

Asymmetrization of spatial distribution of delta-dopant during overgrowth.
E.L. Pankratov.
 

Influence of variability of diffusion coefficient and limit of solubility of a dopant in a multilayer structure on the dopant distribution during forming diffused p-n-junction. Optimization of annealing time.
E.L. Pankratov

Reflection of electromagnetic wave from surface of periodic structure with ferromagnetic layers.
L.N. Butko, V.D. Buchelnikov, I.V. Bychkov, V.G. Shavrov
.

Redistribution of a dopant, which implanted in a multilayer structure, due to pulse laser annealing of radiative defects.
E.L. Pankratov

Calculation of the evolution of clusters of radiation defects taking into account diffision and several secondary processes.
E.L. Pankratov

Diodes based on epitaxial gallium phosphide for high temperature thermometry.
S.Yu. Yerochin, V.A. Krasnov, Yu.M. Shwarts, S.V. Shutov

 

- article in Russian, - article in English.


CONTENTS | ABOUT THE JOURNAL |  EDITORIAL BOARD | PEER REVIEW | Publication Ethics | INFORMATION FOR AUTHORSCONTACTS | SEARCH