Electro
physical and photo electrical characteristics of transistor structures with
distributed p + n
junction and
instruments on their basis.
B. S. Muravskiy, G.P. Rubtsov, L. R. Grigorian, O. G. Kulikov
On
the Influence of Moving Domain Boundary on Spectral Properties of
Confinemented Magnetostatic Waves.
E.A. Vilkov, V.G. Shavrov, N.S. Shevjachov.
Three
Parameters Model of Phase Transitions in Ferromagnetic Alloy Ni-Mn-Ga.
V.D. Buchelnikov, D.L. Dalidovich, A.T. Zayak, V.G. Shavrov.
Observation
of the one-way shape memory effect in Ni-Mn-Fe-Ga Heusler alloy due to the
magnetic field induced martensite – austenite transition.
V.G. Shavrov, A.A. Glebov, I.E. Dikshtein, V.V. Koledov, D.A. Kosolapov, E.P.
Krasnoperov, T. Takagi, A.A. Tulaykova, A.A. Cherechukin.
Спиральная структура в
антиферромагнетиках с магнитоэлектрическим эффектом.
А. А. Халфина
Spiral structure in
antiferromagnetics with magnetoelectric effect.
A. A. Khalfina
Effect of read-write memory of
shape, based on magneto-induced structural transition in polycrystals of
ferromagnetic alloy
Ni2,15Mn0,81Fe0,04Ga.
I.D. Borisenko, K.V. Boyarchuk, V.D. Buchel'nikov, I.E. Dikshtein, D.I.
Ermakov, V.V. Koledov, E.P. Krasnoperov, V.V. Khovailo, T. Takagi, T.O.
Khudaverdyan, V.G. Shavrov.
Magnetic properties and
martensite domain structure in magneto-structural transition of
Ni2,19Mn0,81Ga.
V.D. Buchel'nikov,
I.D. Borisenko, K.V. Boyarchuk, I.E. Dikshtein, D.I.
Ermakov, V.V. Koledov, D.A. Filippov, V.V. Khovailo, T.O.
Khudaverdyan, V.G. Shavrov.
On delay of high-frequency
modulating signals in avalanche photodiodes.
V.I. Grigoryevsky, A.A. Lichmanov, Yu.O. Yakovlev.
Temperature Parameters of
Thin-film Varistors.
Mamedov A.K.ogly.
Temperature-frequency
Characteristics of Structures with Schottky Barrier.
Mamedov Azer Karman ogly.
Electron-Electronic
Interactions in Moderataly Doped Heterojunction
AlxGa1-x/GaAsF.
A. B. Dubois
Asymmetrization of spatial distribution of delta-dopant
during overgrowth.
E.L. Pankratov.
Influence of
variability of diffusion coefficient and limit of solubility of a dopant in a
multilayer structure on the dopant distribution during forming diffused p-n-junction. Optimization of annealing time.
E.L.
Pankratov
Reflection of electromagnetic wave
from surface of periodic structure with ferromagnetic layers.
L.N. Butko, V.D.
Buchelnikov, I.V. Bychkov, V.G. Shavrov.
Redistribution of a
dopant, which implanted in a multilayer structure, due to pulse laser
annealing of radiative defects.
E.L. Pankratov
Calculation of the
evolution of clusters of radiation defects taking into account diffision and
several secondary processes.
E.L. Pankratov
Diodes based on epitaxial
gallium phosphide for high temperature thermometry.
S.Yu. Yerochin, V.A. Krasnov, Yu.M. Shwarts,
S.V. Shutov
Distribution of
dopant in a multilayer structure during production of transistor structure.
E.L. Pankratov
Abstract. Full text:
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(283 kB)
Determination of technological parameters of drift transistors
according to specified operational characteristics.
A.N.
Frolov, К.A. Frolov, S.V.
Shutov
Abstract. Full text:
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(67 kB)
One of Ways of Creation of the Integrated Optical Components for the
Optical Processor.
M. V. Pylypenko, V. Yeg. Hodakov, F. N. Tsivilsky, D.
L. Kiriychuk, G.V. Balurko
Abstract. Full text:
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(518 kB)
Mesoscopic fluctuation of conductance in silicon FETs
with high concentration of built-in charges.
A.S.Bugaev, A.S.Vedeneev, A.M.Kozlov, P.A.Ruzanov
Abstract. Full text:
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(415 kB)
Semiconductor sensor of magnetic field.
I. K. Kamilov, Sh. M. Aliev, M. Sh. Aliev
Abstract. Full text:
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Dispersion of dielectric coefficients and
ac-conductivity
of TlGa
1–хСохS2
single crystals in radio-frequency region.
S. N. Mustafaeva
Abstract. Full text:
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pdf (174
kB)
Photoreflectance from n-i-p-i-n delta-doped GaAs heterostructures.
L.P. Avakyants, P.Yu. Bokov, I.V. Bugakov, A.V. Chervyakov, T.P. Kolmakova
Abstract. Full text:
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pdf (383 kB)
The free-carrier concentration
diagnostics of n-InxGa1-xAs epitaxial films by Raman
Spectroscopy.
L. P. Avakyants, T. P. Kolmakova
Abstract. Full text:
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(197 kB)
Decreasing of depth of elements of
system of implanted-junction rectifiers and increasing of their circit
complexivity by optimization inhomogeneity and annealing of doped structure.
E. L. Pankratov
Abstract. Full text:
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(293
kB)
